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Trench MOSFET and manufacturing method thereof

A trench and gate technology, applied in the field of trench MOSFET and manufacturing trench MOSFET, can solve problems such as gate-source alignment, and achieve the effects of reducing process cost, improving MOS reliability, and simplifying process steps

Active Publication Date: 2021-08-03
HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of this, the object of the present invention is to provide a trench MOSFET and its manufacturing method to solve the gate-source alignment problem

Method used

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  • Trench MOSFET and manufacturing method thereof
  • Trench MOSFET and manufacturing method thereof
  • Trench MOSFET and manufacturing method thereof

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Embodiment Construction

[0048]Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0049] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0050] If it is to describe the situation directly on another layer or ano...

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PUM

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Abstract

The invention discloses a trench MOSFET and a manufacturing method thereof. The trench MOSFET comprises a semiconductor substrate of a first doping type; a groove which extends from the upper surface of the semiconductor substrate to the interior of the semiconductor substrate; a first insulating layer and a shielding conductor which are located in the groove, wherein the first insulating layer is located on the lower side wall and the bottom of the groove and separates the shielding conductor from the semiconductor substrate; a gate conductor and a gate dielectric layer which are located on the upper portion of the groove, wherein the gate dielectric layer is located on the side wall of the upper portion of the groove and separates the gate conductor from the semiconductor substrate; and a grid conductive channel which is connected with the grid conductor; wherein the thickness of the position of the grid conductor connected with the grid conductive channel meets the process requirement of the through hole, and the grid conductor cannot be punched through, so that the problem of short circuit between the grid and the shielding conductor is avoided to a great extent, and the reliability of the MOSFET is improved.

Description

technical field [0001] The present invention relates to semiconductor technology, and more particularly, to a trench MOSFET and a method for manufacturing the trench MOSFET. Background technique [0002] As a power device, the shielded gate trench MOSFET has the characteristics of high breakdown voltage, low on-resistance, and fast switching speed. [0003] Existing shielded gate trench MOSFET devices such as figure 1 As shown, it includes the gate contact hole 101 connecting the gate conductor 102 and the source contact hole 103 of the connector contact region 104. The gate conductor 102 of the shielded gate trench MOSFET is a structure with a thin center and thick sides. The traditional gate The conductor connection method is to punch a contact hole in the middle of the gate conductor. The gate conductor at this position is relatively thin. If the oxide layer under the gate conductor is of poor quality, it is easy to cause a short circuit between the gate conductor and th...

Claims

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Application Information

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IPC IPC(8): H01L29/423H01L29/78H01L21/28H01L21/336
CPCH01L29/7827H01L29/66666H01L29/401H01L29/4236H01L29/42364H01L29/42372H01L29/42356
Inventor 王加坤孙鹤
Owner HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD