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Semiconductor device structure and method of forming the same

A device structure and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem of occupying device area and achieve the effect of avoiding area

Active Publication Date: 2021-11-26
GUANGZHOU CANSEMI TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the above-mentioned capacitor, there is the following problem: the above-mentioned capacitor is usually formed in the device area of ​​the substrate, so it is necessary to isolate the capacitor from its adjacent components, thereby occupying the area of ​​the device area

Method used

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  • Semiconductor device structure and method of forming the same
  • Semiconductor device structure and method of forming the same
  • Semiconductor device structure and method of forming the same

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Embodiment Construction

[0019] The semiconductor device structure and its forming method proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0020] Please refer to figure 1 , which is a schematic cross-sectional view of a semiconductor device structure according to an embodiment of the present invention. Such as figure 1 As shown, the semiconductor device structure includes: a substrate 100, a first capacitor and a second capacitor.

[0021] The substrate 100 has a first redundant area 101 and a second redundant area 102 . The first capacitor is formed in the first redundant region 101...

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Abstract

The present invention provides a semiconductor device structure and a forming method thereof. The semiconductor device structure includes a first capacitor and a second capacitor, the first capacitor is formed in the first redundant region, and the second capacitor is formed in the second redundant region. For the remaining area, since the first capacitor and the second capacitor are both formed in the redundant area of ​​the substrate, it can avoid occupying the area of ​​the device area.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device structure and a forming method thereof. Background technique [0002] Capacitors are important components in integrated circuits and are widely used in chips such as memory, microwave, radio frequency, smart cards, high voltage and filtering. In MOS (Metal-Oxide-Semiconductor, Metal Oxide Semiconductor) devices, commonly used capacitors generally include MOM (Metal-Oxide-Metal, Metal-Oxide-Metal) capacitors, MIM (Metal-Insulator-Metal, Metal-Insulator layer-metal) capacitance and PIP (Poly-Insulator-Poly, polysilicon-insulator-polysilicon) capacitance. However, in the above-mentioned capacitors, there is the following problem: the above-mentioned capacitors are usually formed in the device area of ​​the substrate, so the capacitor needs to be isolated from its adjacent components, thereby occupying the area of ​​the device area. Conte...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L29/94H01L21/82
CPCH01L27/0207H01L29/94H01L29/66181H01L21/82
Inventor 张有志陈运波黄灿阳陈泽勇
Owner GUANGZHOU CANSEMI TECH INC
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