Bismuth tungstate/indium oxyhydroxide composite photoelectrode and preparation method and application thereof
A technology of indium oxyhydroxide and bismuth tungstate, which is applied to the plating of circuits, electrical components, superimposed layers, etc., can solve the problems of difficult electron transfer, unfavorable photocathode protection of carbon steel, etc., to promote aggregation and enhance corrosion resistance. , the effect of reducing the recombination rate
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[0023] The invention provides a preparation method of a bismuth tungstate / indium oxyhydroxide composite photoelectrode, comprising the following steps:
[0024] Deposit Bi on the surface of the substrate by thermal evaporation 2 o 3 , get Bi 2 o 3 Photoelectrode;
[0025] The ethylene glycol solution of ammonium tungstate was drop-coated on the Bi 2 o 3 The surface of the photoelectrode is then calcined to obtain Bi 2 WO 6 Photoelectrode;
[0026] Mix indium nitrate, sodium perchlorate and water to obtain an electrolyte solution;
[0027] In the presence of the electrolyte solution, with the Bi 2 WO 6 The photoelectrode is the working electrode, the Ag / AgCl electrode is the reference electrode, and the platinum grid electrode is the counter electrode. Constant potential deposition is performed to obtain the bismuth tungstate / indium oxyhydroxide composite photoelectrode.
[0028] The present invention adopts the thermal evaporation method to deposit Bi on the surface...
Embodiment 1
[0039] The substrate (specifically FTO conductive glass) is placed in an ultrasonic cleaner and washed with water, ethanol and acetone respectively, and then dried with high-purity nitrogen for use;
[0040] Deposit Bi on the surface of the substrate by thermal evaporation at room temperature (25°C) 2 o 3 , specifically the Bi 2 o 3 The target is placed in a tantalum boat, and the pressure in the reaction chamber is evacuated to 4.5×10 -5 Pa, Bi under the action of applied current 2 o 3 The target is deposited at a deposition rate of 0.1nm / s for 10min to obtain Bi 2 o 3 Photoelectrode;
[0041] Dissolve ammonium tungstate in ethylene glycol to obtain an ethylene glycol solution of ammonium tungstate with a concentration of 1mol / L; use a pipette gun to pipette 100 μL of the ammonium tungstate solution in ethylene glycol and apply it dropwise on Bi 2 o 3 The surface of the photoelectrode (the drop-coating amount of the ethylene glycol solution of ammonium tungstate is 8...
Embodiment 2
[0046] The substrate (specifically FTO conductive glass) is placed in an ultrasonic cleaner and washed with water, ethanol and acetone respectively, and then dried with high-purity nitrogen for use;
[0047] Deposit Bi on the surface of the substrate by thermal evaporation at room temperature (25°C) 2 o 3 , specifically the Bi 2 o 3 The target is placed in a tantalum boat, and the pressure in the reaction chamber is evacuated to 4.5×10 -5 Pa, Bi under the action of applied current 2 o 3 The target is deposited at a deposition rate of 0.2nm / s for 15min to obtain Bi 2 o 3 Photoelectrode;
[0048] Dissolve ammonium tungstate in ethylene glycol to obtain an ethylene glycol solution of ammonium tungstate with a concentration of 0.5mol / L; use a pipette gun to pipette 150 μL of the ammonium tungstate solution in ethylene glycol and apply it dropwise on Bi 2 o 3 The surface of the photoelectrode (the drop-coating amount of the ethylene glycol solution of ammonium tungstate is...
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