A reliability assessment method, device and system for stress migration
A technology of stress migration and reliability, which is applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc. It can solve problems such as long time, inaccurate test results, and inconformity with usage conditions, and achieve accurate evaluation and save testing. resource effect
Active Publication Date: 2022-06-07
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
In actual operation, the test of the stress migration of metal wiring in integrated circuits is based on the wafer level. However, there is a big difference between this test method and the actual use of the final product, resulting in inaccurate test results
[0004] In the related art, there is also a test for the stress migration of the metal wiring in the integrated circuit based on a single chip at the package level. Failure, the time required for this process is very long, which does not meet the actual use
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[0040] In order to make the purposes, technical solutions and advantages of the embodiments of the present application more clear, the specific technical solutions of the invention will be described in further detail below with reference to the accompanying drawings in the embodiments of the present application. The following examples are used to illustrate the present application, but are not intended to limit the scope of the present application.
[0041] In the following description, suffixes such as "module" or "unit" used to represent elements are used only to facilitate the description of the present application, and have no specific meaning per se. Thus, "module" or "unit" can be used interchangeably.
[0042] With the development of semiconductor integration technology, more stringent process technology and smaller and smaller metal dimensions will be applied to products. In this context, it is particularly important to ensure the reliability of metal connections. Me...
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Embodiments of the present application provide a stress migration reliability assessment method, device, and system, which are applied to metal wiring in semiconductor samples, wherein the stress migration reliability assessment method includes: obtaining the semiconductor sample at the actual use temperature Under the first reliability time; according to the first reliability time, determine the second reliability time of the semiconductor sample at the test temperature; carry out the stress migration test on the semiconductor sample to determine the semiconductor sample A failure result at the test temperature and the second reliability time; through the failure result, evaluate the reliability of the stress migration of the metal connection.
Description
technical field [0001] The present application relates to the field of semiconductor testing, and relates to, but is not limited to, a method, device and system for reliability assessment of stress migration. Background technique [0002] With the development of integrated circuit technology, the feature size of integrated circuits has been continuously reduced. In order to ensure the reliability of semiconductor devices, the manufacturing process of semiconductor devices has put forward higher requirements on metal wires for electrical connection between devices. [0003] In semiconductor manufacturing, Stress-Migration (SM) failure of metal is one of the main factors affecting the reliability of semiconductor devices. In practice, the testing of stress migration of metal interconnects in integrated circuits is based on the wafer level. However, this testing method is quite different from the actual use of the final product, resulting in inaccurate test results. [0004] I...
Claims
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IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/20H01L22/14
Inventor 欧阳艳杨素慧王志强杨盛玮
Owner YANGTZE MEMORY TECH CO LTD