Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of multi-current channel flip-chip algainpmini-led chip and its preparation method

An algainpmini-led, multi-current technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems affecting the luminous brightness and reliability of the chip, and achieve the effect of solving the current diffusion problem, increasing reflection, and reducing loss.

Active Publication Date: 2021-11-05
南昌凯捷半导体科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This flip-chip structure makes it difficult for the current to spread evenly inside the chip, which affects the brightness and reliability of the chip.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of multi-current channel flip-chip algainpmini-led chip and its preparation method
  • A kind of multi-current channel flip-chip algainpmini-led chip and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0047] In order to enable those skilled in the art to better understand and implement the technical solution of the present invention, the present invention also provides a method for preparing a multi-current channel flip-chip AlGaInP mini-LED chip, comprising the following steps:

[0048] S1. Provide a GaAs growth substrate (which needs to be removed during the preparation process, so it is not marked in the finished product figure), grow N-type semiconductor layer 5, quantum well layer 4 and P-type semiconductor layer 3 in sequence to obtain an epitaxial wafer;

[0049] S2. Clean the epitaxial wafer, and evaporate a layer of SiO on the side of the epitaxial wafer away from the GaAs growth substrate 2 ;

[0050] S3, provide a substrate 1 of sapphire, vapor-deposit a layer of SiO on one side thereof 2 , align the GaAs growth substrate 1 with the sapphire substrate 1, two layers of SiO 2 In close contact, the bonding is completed to obtain the bonding layer 2;

[0051] S4, ...

Embodiment

[0062] A method for preparing a multi-current channel flip-chip AlGaInP mini-LED chip, comprising the following steps:

[0063] 1. Provide a GaAs growth substrate, and grow an N-type semiconductor layer, a quantum well layer, and a P-type semiconductor layer in sequence;

[0064] 2. Put the epitaxial wafer into the acetone solution and ultrasonically clean it for 15 minutes. After drying, evaporate a layer of SiO on the side of the epitaxial wafer facing away from the GaAs growth substrate. 2 , with a thickness of 2 μm;

[0065] 3. Provide a sapphire substrate, and evaporate a layer of SiO with a thickness of 3 μm on one side 2 , align the two substrates so that the two layers of SiO 2In close contact, the bonding is completed at a temperature of 400°C and a pressure of 16,000Kg;

[0066] 4. Soak the bonded epitaxial wafer in a mixed solution of ammonia water and hydrogen peroxide for 30 minutes, remove the GaAs growth substrate, and expose the N-type semiconductor layer; ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
pore sizeaaaaaaaaaa
refractive indexaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of semiconductor LEDs, in particular to a flip-chip AlGaInP mini-LED chip with multiple current channels and a preparation method thereof. A multi-current channel flip-chip AlGaInP mini-LED chip, comprising a substrate, a bonding layer sequentially arranged on one side of the substrate, a P-type semiconductor layer, a quantum well layer, an N-type semiconductor layer, a first dielectric layer, A second dielectric layer and a third dielectric layer; the surface of the third dielectric layer away from the substrate is provided with a P electrode and an N electrode as well as a first current channel and a second current channel. The first current channel and the second current channel are separated by a dielectric layer, which can effectively prevent chip short circuit. The design of the conductive via hole can reduce the loss of light-emitting area and improve the light-emitting brightness of the chip.

Description

technical field [0001] The invention relates to the technical field of semiconductor LEDs, in particular to a flip-chip AlGaInP mini-LED chip with multiple current channels and a preparation method thereof. Background technique [0002] LED chips, also known as LED light-emitting chips, can convert electrical energy into light energy and are the core components of LED lights. Semiconductor wafer is made up of two parts, and a part is P-type semiconductor, and hole occupies an leading position in it, and the other end is N-type semiconductor, and here mainly is electron. But time these two kinds of semiconductors couple together, between them, just form a P-N junction. When electric current acts on this chip by wire time, electron will be pushed to P district, and in P district, electron is with hole recombination, then will send energy with the form of photon, the principle of LED luminescence that Here it is. [0003] With the rapid development of Mini LED display technol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/38H01L33/46H01L33/00
CPCH01L33/382H01L33/46H01L33/0062H01L33/0093
Inventor 王克来徐培强熊珊潘彬王向武
Owner 南昌凯捷半导体科技有限公司