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Interplanar spacing measurement method based on electron back scattering diffraction pattern

A technique for electronic backscattering and diffraction patterns, which is used in measuring devices, material analysis using wave/particle radiation, instruments, etc., and can solve problems such as poor pattern quality, difficult crystal plane spacing, and overlapping diffraction patterns.

Active Publication Date: 2021-09-14
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, due to the existence of defects such as grain boundaries, misorientation, and dislocations in the material, the diffraction patterns overlap, and inevitably some patterns are of poor quality and the boundaries of the Kikuchi bands are not clear. Therefore, it is usually difficult to accurately measure the Kikuchi bands. Width, which brings greater difficulty to accurately calculate the interplanar spacing
Second, the width of the Kikuchi band and the interplanar spacing of the corresponding crystal are not a simple inverse relationship

Method used

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  • Interplanar spacing measurement method based on electron back scattering diffraction pattern
  • Interplanar spacing measurement method based on electron back scattering diffraction pattern
  • Interplanar spacing measurement method based on electron back scattering diffraction pattern

Examples

Experimental program
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Effect test

Embodiment 1

[0047] image 3 It is the silicon single crystal electron backscattered diffraction pattern 1 in embodiment 1, Figure 4 This is a diagram showing the numbering of the Kikuchi bands of silicon single crystal electron backscattered diffraction pattern 1 in Example 1.

[0048] Such as image 3 As shown, the electron backscattered diffraction pattern 1 was obtained by taking the cubic silicon single crystal as the research object.

[0049] The position of the center of the pattern and the distance DD between the sample and the screen are obtained from the EBSD system. In this embodiment, the coordinates of the center of the pattern are (676.032, 366.592, 0), and DD is 674.688 (number of pixels), so the coordinates of the incident point O are ( 676.032, 366.592, 674.688). The accelerating voltage is 20keV, and the electron wavelength λ is calculated according to formula (1) as

[0050] Then, the original pattern is processed by Gaussian filtering method such as noise reducti...

Embodiment 2

[0056] Figure 5 It is the silicon single crystal electron backscattered diffraction pattern 2 in embodiment 2; Figure 6 This is a diagram showing the numbering of the Kikuchi bands of the silicon single crystal electron backscattered diffraction pattern 2 in Example 2.

[0057] Such as Figure 5 As shown, the electron backscattered diffraction pattern 2 was obtained by taking the cubic silicon single crystal as the research object.

[0058] The position of the center of the pattern and the distance DD between the sample and the screen are obtained from the EBSD system. In this embodiment, the coordinates of the center of the pattern are (678.72, 367.616, 0), and DD is 674.688 (number of pixels), so the coordinates of the incident point O are ( 678.72, 367.616, 674.688). The accelerating voltage is 20keV, and the electron wavelength λ is calculated according to formula (1) as

[0059] Then, the original pattern is processed by Gaussian filtering method, such as denoisin...

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Abstract

The invention discloses an interplanar spacing measurement method based on an electron back scattering diffraction pattern. The method comprises the following steps: collecting the electron back scattering diffraction pattern of a crystal sample, defining a pattern plane as a reference plane and setting an original point; recording the coordinate of the center of the pattern and the distance between the sample and the screen, solving the coordinate of an incidence point right above the center of the pattern, recording an acceleration voltage and calculating an electron wavelength; numbering the Kikuchi zone, and extracting a first boundary and a second boundary of the Kikuchi zone close to the central position of the pattern; respectively drawing vertical lines from the center of the pattern to the first boundary and the second boundary to intersect at a first intersection point and a second intersection point, and recording a coordinate of the first intersection point and a coordinate of the second intersection point; according to the coordinate of the incidence point, the coordinate of the first intersection point and the coordinate of the second intersection point, the diffraction angle of the corresponding crystal surface of the Kikuchi zone is worked out; and according to the diffraction angle and the electron wavelength, calculating the interplanar spacing of the corresponding crystal surface of the Kikuchi zone through a Bragg formula.

Description

technical field [0001] The invention relates to the technical field of material microstructure characterization and crystal structure analysis, in particular to a method for measuring interplanar spacing based on electron backscattered diffraction patterns. Background technique [0002] Electron Backscattered Diffraction (EBSD) is a complete set of microscopic analysis equipment, which has the function of submicron crystal structure analysis, and can provide crystal orientation, texture, and grain phase identification in a wide range Crystallographic statistical information such as content distribution and content distribution are called "new weapons" for the study of material microstructure. EBSD has its own unique advantages. Compared with X-ray diffraction, EBSD can not only obtain crystal structure and orientation information, but also correspond to the microstructure of the material, determine the crystallographic parameters and content of different phases in the mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/203
CPCG01N23/203G01N2223/053
Inventor 彭帆曾毅张积梅林初城刘紫微姜彩芬
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI