Operation method of flash memory and flash memory
A technology of flash memory and an operation method, applied in the semiconductor field, can solve the problems of read errors of flash memory cells, floating gate leakage and the like
Active Publication Date: 2021-09-21
YANGTZE MEMORY TECH CO LTD
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[0005] The invention provides an operation method of a flash memory and a flash memory, which effectively solves the problem that the electrons stored in the floating gate of the flash memory unit will leak from the floating gate due to the intrinsic electric field generated by it, thereby causing the flash memory unit to fail. read error problem
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[0052] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than Full examples. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.
[0053] The embodiment of the present invention proposes a corresponding solution to the problem of reading errors in the flash storage unit caused by the data retention (Data Retention) characteristic of the flash memory, and specifically takes 3D NAND flash memory as an example for illustration.
[0054] In 3D NAND Flash (that is, three-dimensional NAND flash memory), multi-bit storage cells can be programmed at one of the multi-level programming thresho...
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The invention provides an operation method of a flash memory and the flash memory; the flash memory comprises a plurality of multi-bit memory cells, each multi-bit memory cell can be programmed to one order of multi-order programming threshold voltage, and the multi-order programming threshold voltage is provided with corresponding voltage value distribution area of each order and preset reading voltage of each order. The operation method comprises the following steps: detecting a target-order actual threshold voltage of a target-order programming threshold voltage in multi-order programming threshold voltages; and setting a compensation reading voltage corresponding to the target order programming threshold voltage according to the target order actual threshold voltage. According to the operation method provided by the invention, the compensation reading voltage corresponding to the target order programming threshold voltage is set according to the detected target order actual threshold voltage of the multi-bit storage unit after electrons are leaked from the floating gate; therefore, the problem of reading errors due to the fact that the preset reading voltage corresponding to the target-order programming threshold voltage is used for carrying out data reading on the multi-bit storage unit is avoided.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an operation method of a flash memory and the flash memory. Background technique [0002] In 3D NAND Flash (that is, three-dimensional NAND flash memory), a multi-bit memory cell can be programmed at one of the multi-level programming threshold voltages, so that one multi-bit memory cell can store multiple different data. For example, a QLC NAND memory cell (Quad-Level Cell, four-bit memory cell) can be programmed at one of 16 levels of programming threshold voltage, that is, a QLC NAND memory cell can store 16 different data. [0003] figure 1 is a schematic diagram of the structure of the flash storage unit, such as figure 1 As shown, the storage principle of the flash memory is that by applying a control voltage to the control gate 1 of the flash memory unit, the quantum tunneling effect occurs in the flash memory unit, and the electrons in the substrate 2 enter throu...
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IPC IPC(8): G11C16/10G11C16/34
CPCG11C16/10G11C16/3404
Inventor 郭晓江
Owner YANGTZE MEMORY TECH CO LTD