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Oxidation annealing method

An oxidation annealing and oxide film technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem that the improvement of wafer stress and wafer lattice defects is small, so as to repair lattice defects and improve wafer stress. Effect

Pending Publication Date: 2021-09-21
捷捷半导体有限公司
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Problems solved by technology

[0005] The purpose of this application is to provide an oxidation annealing method to solve the problem that the oxidation annealing process in the prior art has little effect on the promotion of wafer stress and the improvement of wafer lattice defects

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Embodiment Construction

[0042] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0043] Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art w...

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Abstract

The invention provides an oxidation annealing method, and relates to the technical field of semiconductor annealing processes. The method comprises the following steps of: placing a wafer to be processed in a reaction furnace at low temperature; introducing oxygen, raising the temperature in the reaction furnace to a threshold temperature, and maintaining the temperature for a first preset time; and finally, reducing the temperature in the reaction furnace at a speed of less than or equal to 1 DEG C / min until the temperature in the reaction furnace is recovered to low temperature, so that internal defects of the to-be-treated wafer are separated out to the surface in the oxidation annealing process. The oxidation annealing method provided by the invention has the advantages that lattice defects in the wafer can be repaired, and the stress of the wafer is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor annealing process, in particular, to an oxidation annealing method. Background technique [0002] In the current wafer manufacturing process, there is an oxidation annealing process step. This step is generally performed after the wafer is doped or after a damaged layer appears on the wafer surface. The purpose is to repair part of the wafer in the wafer at high temperature. At the same time, part of the stress of the wafer is released, and an oxide layer with a certain film thickness is grown on the surface to prepare for the post-processing step. [0003] Since the general wafer diffusion N+ region adopts phosphorus-doped diffusion, the temperature of this diffusion is generally around 1200°C, so the normal oxidation annealing method uses a high temperature of <1200°C for oxidation annealing operations, to avoid too high temperature affecting the concentration of phosphorus di...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/67
CPCH01L21/02005H01L21/0201H01L21/67098H01L21/67103
Inventor 朱泽中张超王成森
Owner 捷捷半导体有限公司
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