High-purity gallium telluride polycrystal synthesis production device

Abstract

The invention discloses a high-purity gallium telluride polycrystal synthesis production device, and particularly relates to the technical field of semiconductor material preparation, the high-purity gallium telluride polycrystal synthesis production device comprises a production base, the four corners of the upper surface of the production base are fixedly connected with fixing supports, and the opposite faces of the four fixing supports are fixedly connected with the faces, away from each other, of four limiting frames through pin shafts correspondingly; one ends of the opposite surfaces of the four limiting frames are movably connected with the outer surface of a same quartz cap through pin shafts, and a sealing ring is arranged on the lower surface of the quartz cap. According to the invention, the limiting frame, the quartz tube, the quartz cap and the pulley are arranged, and the limiting sleeve is fixed on the surface of the quartz cap, so that the quartz cap is not easy to fall off in the process of moving the quartz cap, and a worker can conveniently mount and dismount the quartz cap; and a worker does not need to repeatedly cut and replace the quartz cap and the quartz tube, so that the service life of the quartz tube and the quartz cap is guaranteed, and the environmental protection property of the production device is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, and more specifically, the invention relates to a high-purity gallium telluride polycrystalline synthesis production device. Background technique [0002] As a new type of P-type sulfide, GaTe has a high hole density (6×1012cm-2). Unlike other transition metal sulfides, its bulk material and atomic layer material are both Direct bandgap (1.65eV). Gallium telluride belongs to the monoclinic system (C2 / m space group), and the hexagonal phase is its metastable phase. Like other two-dimensional materials, the atoms in the GaTe layer are bonded by covalent bonds, while the interlayers are bonded by weak van der Waals force. Its layer is composed of Te-Ga-Ga-Te along the c-axis. The suitable energy band width makes it have potential applications in solar window materials and room temperature radiation detection, but because of its complex crystal structure, the structural r...

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the above-mentioned defects of the prior art, the present invention provides a high-purity gallium telluride polycrystalline production device, and the technical problems to be solved by the present invention are: Since the quartz tube has a low-temperature zone and a high-temperature zone, the temperature of each temperature zone is controlled by a computer to carry out polycrystalline synthesis. However, since the quartz tube is placed horizontally, the cross-section of the synthesized polycrystalline material is D-shaped, and it is vacuumized. When processing the interior of the reaction vessel, it is not easy to quickly disassemble and assemble the reaction vessel in the furnace, which has a great impact on the polycrystalline synthesis of gallium telluride, and the existing quartz tube needs to be welded to maintain the vacuum in the tube, so After each use, the part of the quartz cap needs to be cut off, and each quartz tube will be discarded after being used up to three times. It is difficult to guarantee the environmental protection of the production device.

Images