Method for realizing multi-photon absorption via chromium-doped sulfur gallium silver crystal
A multi-photon absorption and optical absorption technology, which is applied in chemical instruments and methods, photovoltaic power generation, hydrogen production, etc., can solve problems such as expensive and lack of density of states, so as to increase the quantity, improve the efficiency of optical absorption, and improve the photolysis of water The effect of hydrogen production activity
Active Publication Date: 2021-10-19
SHANGHAI DIANJI UNIV
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Problems solved by technology
At present, there are several methods to obtain the intermediate band: the first is to design the intermediate band of quantum dots, the disadvantage is that the intermediate band has limited electronic states in the self-conducting band, so it lacks sufficient density of states; the second is a high-mismatch alloy, but for Growth of highly mismatched alloys requiring expensive epitaxy or pulsed laser melting techniques
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[0035] AgGa 1-x Cr x S 2 ( x =0, 0.01, 0.02, 0.03) The material is prepared by vacuum solid-state sintering reaction method, and the specific process is as follows:
[0036] Step 1: First, according to the stoichiometric ratio, Ag powder (4N), Ga block (5N), and S powder (5N) are vacuum-packed in a quartz glass tube, and then the quartz tube is sintered in a muffle furnace. The sintering temperature range The temperature is 700~900°C, and the heating rate is 10°C / min. After holding at 900°C for 48 hours, wait for the temperature in the furnace to cool down to room temperature, then take out the experimental sample, mark the sample and pack it into a bag.
[0037] Step 2: Vacuum-encapsulate the stoichiometric ratio of Ag powder (4N), Cr powder (4N), and S powder (5N) in a quartz glass tube, then place the quartz tube in a muffle furnace for sintering, and the sintering temperature range is 700~900°C, the heating rate is 10°C / min, after 48 hours of heat preservation at 900°C...
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The invention relates to a method for realizing multiphoton absorption via a chromium-doped sulfur gallium silver crystal. The method is specifically characterized in that Cr is doped at a cation Ga site of a host material AgGaS2, so a semiconductor with a chemical molecular formula of AgGa<1-x>Cr<x>S<2> is formed, wherein x in the formula is more than 0.008 and less than 0.1. Compared with the prior art, a metallic semi-occupied intermediate band is introduced, and the intermediate band is mainly composed of 3D-state valence electrons of Cr. Due to the appearance of the metallic intermediate band, the absorption of various low-energy photons is realized, and the number of photo-induced electron hole pairs is increased, so the photon energy can well cover the visible light range of a solar spectrum, sunlight is effectively utilized, the optical absorption efficiency of visible light is greatly improved, and photoelectric conversion efficiency and photocatalytic water splitting hydrogen production activity of a solar cell are effectively improved; and therefore, the material is expected to improve the problem of low optical efficiency of a traditional semiconductor, and is expected to become a new-generation photocatalytic hydrogen production material.
Description
technical field [0001] The invention relates to the field of semiconductor optoelectronic materials, in particular to a Cr-doped AgGaS 2 A method to achieve multiphoton absorption. Background technique [0002] In recent years, people's living standards have been continuously improved, society has continued to develop, and the demand for electric energy in various industries has also continued to increase. However, the shortage of electrical energy has gradually become a key factor hindering the stable development of the electrical industry. Despite the rapid development of new energy in recent years, fossil energy still occupies a dominant position in my country's energy supply. At the same time, the problem of environmental pollution caused by fossil energy is becoming more and more serious. Social development at the expense of the environment is not a long-term solution. If China wants to develop sustainably, it must strike a balance between development and the environ...
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Patent Timeline
Login to View More IPC IPC(8): C01G15/00B01J27/04H01L31/032C01B3/04
CPCC01G15/006H01L31/0323B01J27/04C01B3/042C01P2002/54C01P2002/72C01P2006/60B01J35/39Y02E10/541Y02E60/36
Inventor 彭文豪陈平李彬彬施凯旋
Owner SHANGHAI DIANJI UNIV