Preparation method of oxygen vacancy-rich tungsten trioxide and application of oxygen vacancy-rich tungsten trioxide in photocatalytic reaction
A tungsten trioxide and oxygen vacancy technology, applied in the preparation of tungsten oxide/tungsten hydroxide, organic compounds, metal/metal oxide/metal hydroxide catalysts, etc. The effect of improving reaction conversion, promoting adsorption activation, high yield and selectivity
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Embodiment 1
[0031] (1) Weigh 1 g of tungstic acid, spread it in a small ark, cover it and place it in a muffle furnace, heat it to 400 °C, keep it warm for 2 h, and cool it to room temperature naturally to obtain yellow powder WO 3 .
[0032] (2) Take 0.15 g of the above-mentioned tungsten trioxide powder in a 50 mL quartz reaction tube, add 15 mL of deionized water and 1 mL of methanol in sequence, freeze and vacuumize, react with 300 W xenon light for 1.0 h, wash several times, and place Vacuum-dry in a vacuum oven at 60°C to obtain WV-1h.
Embodiment 2
[0034] The preparation method is the same as that in Example 1, except that the reaction time under xenon light irradiation is 0.5 h, and the catalyst WV-0.5 h is obtained.
Embodiment 3
[0036] The preparation method is the same as that in Example 1, except that the reaction time under xenon light irradiation is 1.5 h, and the catalyst WV-1.5 h is obtained.
[0037] figure 1 It is the x-ray diffraction pattern of WV-x. It can be seen from the figure that the obtained product is monoclinic tungsten trioxide, and there is no obvious change in crystallinity before and after photoetching. figure 2 It is the Raman spectrum of WV-x. It can be seen from the figure that there is an oxygen vacancy structure on WV. image 3 with Figure 4 They are the scanning electron micrograph and transmission electron micrograph of WV respectively. It can be seen from the figure that it is different from the sample before photoetching ( Figure 5 with Image 6 ) compared with the photoetching, the sample particles become smaller, and the sample has a hole structure and an oxygen vacancy structure formed by etching.
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