Chemical cleaning solution and use method thereof
A technology of chemical cleaning and oxidizing agent, applied in the field of chemical cleaning liquid, can solve problems such as disadvantages, achieve the effect of strong cleaning ability, small corrosion rate, and promote cleaning effect
Pending Publication Date: 2021-10-22
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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- Abstract
- Description
- Claims
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Problems solved by technology
However, after pattern transfer, the remaining metal hard mask titanium nitride is not conducive to the subsequent
Method used
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[0020] Example
[0021] The components shown in Examples 1 to 18 and Comparative Examples 1 to 6 were mixed in accordance with Table 1, and the components were mixed uniform, wherein the water was marga.
[0022] Table 1 Embodiment 1 to 18 and Components of Comparative Examples 1 to 6 and their content
[0023]
[0024]
[0025]
[0026] It will be appreciated that the content described in Table 1 is a mass percentage concentration.
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Abstract
The invention provides a chemical cleaning solution and a use method thereof. The chemical cleaning solution contains an oxidizing agent, pyrazole and derivatives thereof, an oxidizing agent stabilizer, diglycolamine, fluoride and water. The cleaning solution disclosed by the invention is high in cleaning capacity, and plasma etching residues and hard film titanium nitride in a copper Damascus process can be effectively removed in one step; in addition, the cleaning solution has a relatively low corrosion rate on metal Cu and non-metal media (such as SiON, TEOS, low-dielectric-constant materials BDII and the like).
Description
technical field [0001] The invention relates to the field of chemical cleaning, in particular to a chemical cleaning liquid and a using method thereof. Background technique [0002] As the size of microelectronic devices decreases and performance requirements further increase, the critical dimensions of metal wiring in semiconductor devices become smaller and smaller. In order to reduce signal delay and reduce energy consumption, it has become a new trend for metal copper to replace metal aluminum and Low-k dielectric materials to replace traditional dielectric materials. In the case of widely using the copper double damascene process, it is more and more important to find a cleaning solution that can effectively remove the etching residue and protect the metal copper and the Low-k dielectric material BDII. [0003] At the same time, as the size of the semiconductor process becomes smaller and smaller, the use of metal hard mask titanium nitride can effectively control the ...
Claims
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IPC IPC(8): C11D7/32C11D7/02C11D7/04C11D7/08C11D7/10C11D7/26C11D7/60H01L21/02H01L21/306
CPCC11D7/3281C11D7/26C11D7/04C11D7/08C11D7/10C11D7/3272C11D7/02C11D7/3245C11D11/0047H01L21/02068H01L21/30608
Inventor 刘兵彭洪修肖林成张维棚赵鹏
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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