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Manufacturing method of groove type MOS device

A technology of MOS device and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of increasing leakage of the device channel, and achieve the effect of improving the leakage of the channel

Pending Publication Date: 2021-11-09
HUA HONG SEMICON WUXI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the silicon nitride film between the dielectric layer and the epitaxial layer not only prevents the intrusion of external mobile ions, but also prevents the charge generated by the in-line process from being released from the device, which eventually leads to a larger channel leakage of the device

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  • Manufacturing method of groove type MOS device
  • Manufacturing method of groove type MOS device
  • Manufacturing method of groove type MOS device

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Embodiment Construction

[0033] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0034] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention discloses a manufacturing method of a groove type MOS device, which relates to the field of semiconductor manufacturing. The manufacturing method of the groove type MOS device comprises the following steps of providing a substrate with a groove gate structure, forming a silicon nitride layer through which ultraviolet light can penetrate on the surface of the substrate, forming a dielectric layer on the surface of the silicon nitride layer, forming a contact hole in the dielectric layer, forming a top metal layer on the surface of the dielectric layer, depositing a passivation layer, photoetching and etching the passivation layer, and irradiating the substrate with ultraviolet light. The problem that according to an existing groove type MOS device, after a silicon nitride thin film is additionally arranged below a dielectric layer in a cushioned mode, channel electric leakage becomes large is solved. And the effect of improving the channel electric leakage of the groove type MOS device is achieved.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a trench type MOS device. Background technique [0002] A power device is a semiconductor device for power processing, and a power MOSFET device is a type of power device. Trench MOS devices are widely used in automotive electronics, power management, voltage regulators and other fields due to their high integration and low on-resistance. [0003] Due to the insufficient ability of the dielectric layer and passivation layer in the trench MOS device to capture and block mobile ions, in the reliability test of the trench MOS device, the reliability of some dies may fail. In order to improve the reliability pass rate, before forming the dielectric layer, a layer of silicon nitride film is formed on the surface of the epitaxial layer, and the silicon nitride film blocks the intrusion of external mobile ions to the device. [0004] Howe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336
CPCH01L29/66477
Inventor 钱佳成冯超刘秀勇陈正嵘
Owner HUA HONG SEMICON WUXI LTD