Method and system for estimating junction temperature of power semiconductor device in power module
A technology for power semiconductors and power modules, applied in the field of estimation, can solve the problems of reducing the durability life of power modules, burning out, not being able to reflect correctly, etc., to achieve the effect of improving accuracy, preventing damage or stopping the operation of devices
Pending Publication Date: 2021-11-16
HYUNDAI MOTOR CO LTD +1
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Problems solved by technology
Since the coolant temperature is mainly measured by the coolant temperature sensor installed at the inlet of the coolant channel to which the coolant is supplied, when the coolant is not actually and properly delivered to the position thus increasing the temperature of the power module, the junction temperature estimate does not correctly reflect this temperature increase
[0005] Specifically, the IGBT of a recently commercialized power semiconductor device may have an embedded temperature sensor to detect a temperature rise due to an abnormal supply of coolant, but since a diode, which is another power semiconductor device, does not have a temperature sensor embedded, even when When the temperature rises due to abnormal coolant supply, the junction temperature is still predicted to be low, causing burnout and reducing the endurance life of the power module
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[0027] It should be understood that the term "vehicle" or "vehicular" or other similar terms as used herein includes motor vehicles in general, including, for example, sports utility vehicles (SUVs), passenger cars, vans, various commercial vehicles, Vehicles, including various boats, ships, aircraft, etc., and including hybrid vehicles, electric vehicles, internal combustion engine vehicles, plug-in hybrid electric vehicles, hydrogen-powered vehicles and other alternative fuel vehicles (for example, derived from non-fossil fuels).
[0028] Although the exemplary embodiment is described as utilizing a plurality of units to perform the exemplary process, it should be understood that the exemplary process may also be performed by one or more modules. Furthermore, it should be understood that the term "controller / control unit" refers to a hardware device including memory and a processor, and is specifically programmed to carry out the processes described herein. The memory is co...
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A method and system for estimating the junction temperature of a power semiconductor device of a power module are provided. The method includes computing a junction temperature prediction value of the first power semiconductor device based on a power loss and a thermal resistance of the first power semiconductor device and computing a junction temperature prediction value of the second power semiconductor device based on a power loss and a thermal resistance of the second power semiconductor device. A temperature prediction value of a heat sink is computed by subtracting the junction temperature prediction value of the first power semiconductor device from a sensing temperature sensed by the temperature sensor. The junction temperature of the second power semiconductor device is then finally determined by adding the temperature prediction value of the heat sink to the junction temperature prediction value of the second power semiconductor device.
Description
technical field [0001] The present invention relates to a method and system for estimating the junction temperature of a power semiconductor device of a power module, and more particularly, to such a method and system for estimating the junction temperature of a power semiconductor device of a power module, even in the When an abnormality occurs in the cooling system that supplies the coolant to the power module, the junction temperature of the power semiconductor device that does not have an embedded temperature sensor is also properly estimated. Background technique [0002] Typically, an inverter that converts DC power is needed to generate 3-phase AC power to drive the motor. The inverter includes a power module having power semiconductor devices such as insulated gate bipolar transistors (IGBTs) and diodes that perform switching operations. The power semiconductor devices of the power module need to be managed at a predetermined maximum allowable temperature in order t...
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IPC IPC(8): G01R31/26G01K13/00
CPCG01R31/2601G01K13/00H01L23/34G01K7/427H01L25/18G01K7/01G01K7/425G01R31/2619G01K7/015H01L23/473G01K2217/00
Inventor 李制桓
Owner HYUNDAI MOTOR CO LTD