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Semiconductor device and manufacturing method thereof

A technology of semiconductors and devices, which is applied in the field of semiconductor devices and their manufacturing, and can solve problems such as increasing the complexity of semiconductor manufacturing processes

Pending Publication Date: 2021-11-19
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This scaling down increases the complexity of the semiconductor manufacturing process

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

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Embodiment Construction

[0015] The following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific embodiments or examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to be limiting. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which a first component may be formed between the first component and the second component. Additional components such that the first and second components may not be in direct contact. Furthermore, the present invention may repeat reference numerals and / or letters in various examples. This repetition is for the purposes of simplicity and clarity and does not in itself indicate a relationship between the various ...

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PUM

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a fin structure disposed on the substrate, a source / drain (S / D) region disposed on the fin structure, and a gate structure disposed on the fin structure adjacent to the S / D region. The gate structure includes a gate stack disposed on the fin structure and a gate cap structure disposed on the gate stack. The gate cap structure includes a conductive gate cap disposed on the gate stack and an insulating gate cap disposed on the conductive gate cap. The semiconductor device also includes a first contact structure disposed over the gate stack. A portion of the first contact structure is disposed within the gate cap structure and separated from the gate stack by a portion of the conductive gate cap.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor devices and methods of manufacturing the same. Background technique [0002] As semiconductor technology advances, there is an increasing demand for higher storage capacity, faster processing systems, higher performance and lower cost. To meet these demands, the semiconductor industry continues to shrink the size of semiconductor devices, such as metal oxide semiconductor field effect transistors (MOSFETs), including planar MOSFETs and fin field effect transistors (finFETs). This scaling down increases the complexity of the semiconductor manufacturing process. Contents of the invention [0003] According to an aspect of an embodiment of the present invention, there is provided a semiconductor device, comprising: a substrate; a fin structure disposed on the substrate; a source / drain (S / D) region disposed on the fin structure; a gate a pole structure disposed adjacent to the source / drain re...

Claims

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Application Information

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IPC IPC(8): H01L27/088H01L27/092H01L21/8234H01L21/8238
CPCH01L27/0886H01L27/0924H01L21/823431H01L21/823475H01L21/823821H01L21/823871H01L21/823418H01L29/66795H01L21/823437H01L21/76897H01L21/76895H01L21/76843H01L21/76865H01L21/76825H01L29/785H01L29/41791H01L29/7851
Inventor 程仲良
Owner TAIWAN SEMICON MFG CO LTD