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Light-emitting device and preparation method thereof

A technology of light-emitting devices and semiconductors, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as lattice defects, increased manufacturing costs, and slow film growth rates

Pending Publication Date: 2021-12-03
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] When III-V semiconductor nanoparticles are used as LED materials, when an insulating film is formed on the surface of the semiconductor nanoparticle, lattice defects are generated at the interface between the semiconductor compound and the insulating film, deteriorating the efficiency of the LED
In addition, since the insulating film is coated by using an atomic layer deposition (ALD) process, a process of providing a precursor material of the insulating film and removing the residue is repeatedly performed, and thus, the growth rate of the film may be slow and the manufacturing cost may increase

Method used

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  • Light-emitting device and preparation method thereof

Examples

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Effect test

example 1

[0131] In addition to the formation of III-V compound protective layer on the surface of GaN nanorods by wet chemical reaction, and the formation of Al on the surface of III-V compound protective layer by wet chemical reaction 2 o 3 Except for the protective layer, a light-emitting device was fabricated in substantially the same manner as the formation of GaN nanorods in Comparative Example 1.

[0132] Evaluation Example 1: Lattice Defect Evaluation

[0133] The lattice defects of the light-emitting devices fabricated in Example 1 and Comparative Example 1 to Comparative Example 4 were evaluated using variable energy positron annihilation. The results are shown in Table 1.

[0134] Table 1

[0135] Light emitting device Lattice mismatch degree (%) Example 1 0.36 Comparative example 1 0.56 Comparative example 2 - Comparative example 3 13.8 Comparative example 4 10.8

[0136] Referring to the results of Table 1, it was found that...

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Abstract

Provided are a light-emitting device, a method of preparing the light-emitting device. The light-emitting device may include: a semiconductor region including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; a first protective layer on at least one portion of a surface of the semiconductor region and including a Group III-V compound; and a second protective layer on the first protective layer and including a metal oxide.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2020-0063889 filed in the Korean Intellectual Property Office on May 27, 2020, the entire contents of which are incorporated herein by reference. technical field [0002] One or more embodiments of the present disclosure relate to a light emitting device, a method of making the light emitting device, an ink composition including the light emitting device, and an apparatus including the light emitting device. Background technique [0003] Light emitting devices (LEDs) have high light conversion efficiency, consume relatively very little energy, and are semi-permanent and eco-friendly. In order to use an LED as a lighting or display device, the LED can be incorporated between a pair of electrodes capable of applying electrical power to the LED. Methods of bonding LEDs to electrodes can be classified into methods of growing LEDs directly on a pair of electrodes and methods of arrangin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/44H01L33/32H01L33/06H01L33/00
CPCH01L33/44H01L33/32H01L33/06H01L33/0075H01L33/20H01L33/56H01L2933/005H01L33/007H01L33/0062H01L33/04H01L33/325
Inventor 高崙赫李昌熙郑然九金德起朴宗源河在国
Owner SAMSUNG DISPLAY CO LTD