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Composite material, preparation method thereof and light-emitting diode

A composite material and compound technology, applied in the field of composite materials and their preparation, light-emitting diodes, can solve problems such as poor film quality, and achieve the effects of less surface defects, high density and long service life

Active Publication Date: 2021-12-10
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a composite material and its preparation method, as well as a light-emitting diode containing the above-mentioned composite material, aiming to solve the problem that the existing metal oxide nanoparticles show a disordered loose structure after film formation, which leads to The problem of poor film quality, the specific technical solution is as follows:

Method used

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  • Composite material, preparation method thereof and light-emitting diode
  • Composite material, preparation method thereof and light-emitting diode
  • Composite material, preparation method thereof and light-emitting diode

Examples

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preparation example Construction

[0025] like figure 1 Said, the preparation method of a kind of composite material that the embodiment of the present invention provides, comprises the following steps:

[0026] S01, providing polyaromatic ring compounds and metal oxide nanoparticles with the structure shown in general formula I, Ar 1 、Ar 2 、Ar 3 and Ar 4 selected from aromatic rings, X 1 、X 2 and x 3 selected from active groups capable of binding to metal oxide nanoparticles, R 1 , R 2 and R 3 Each independently contains at least one of an alkylene group, an amine group, -N=N-, an alkenyl group, an alkynyl group and a phenyl group, and m, n and y are each independently selected from 0 or a positive integer;

[0027]

[0028] S02, dispersing polyaromatic compounds and metal oxide nanoparticles in a solvent to obtain a mixed solution;

[0029] S03. Heat the mixed solution to obtain a composite material.

[0030] The preparation method of the composite material provided by the embodiment of the pres...

Embodiment approach

[0098] As an embodiment, a method for preparing a QLED device includes:

[0099] (1) forming an anode on the substrate;

[0100] (2) forming a hole injection layer on the anode;

[0101] (3) A hole transport layer is formed on the hole injection layer.

[0102] (4) Depositing a light emitting layer on the hole transport layer;

[0103] (5) Depositing an electron transport layer on the light-emitting layer;

[0104] (6) A cathode layer is formed on the electron transport layer.

[0105] In order to make the above-mentioned implementation details and operations of the present invention clearly understood by those skilled in the art, as well as the embodiment of the present invention, a composite material and its preparation method and the progressive performance of light-emitting diodes are remarkably reflected, the following examples are used to implement the present invention Give an example.

Embodiment 1

[0107]This embodiment provides a light-emitting diode, and its preparation method specifically includes the following steps:

[0108] (1) forming an anode on the substrate;

[0109] (2) Spin-coat PEDOT:PSS on the anode to form a hole injection layer;

[0110] (3) Spin-coat TFB on the hole injection layer, spin-coat at 3000r / min for 30s, and heat at 150°C for 30min to form a hole-transport layer.

[0111] (4) Spin-coat CdZnSe / ZnSe quantum dots on the hole transport layer, anneal after spin-coating at 3000r / min for 30s, and form a light-emitting layer;

[0112] (5) At room temperature, according to the molar ratio of 1,3,5-tris(4-carboxyphenyl)benzene to ZnO nanoparticles is 1:30, add 1,3,5-tris to the ZnO-ethanol solution (4-Carboxyphenyl)benzene-ethanol solution, after dissolving, a clear mixed solution is obtained; the mixed solution is spin-coated on the light-emitting layer, spin-coated at 3000r / min for 30s, and heated at 150°C for 30min to form electron transport layer;...

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Abstract

The invention belongs to the technical field of display, and particularly relates to a preparation method of a composite material. The preparation method comprises the steps of providing a polyaromatic ring compound with a structure shown as a general formula I defined in the description and metal oxide nanoparticles, wherein Ar1, Ar2, Ar3 and Ar4 are selected from aromatic rings, X1, X2 and X3 are selected from active groups capable of being combined with the metal oxide nanoparticles, R1, R2 and R3 independently contain at least one group of alkylene, amido, -N = N-, alkenyl, alkynyl and phenyl, and m, n and y are independently selected from 0 or positive integers; dispersing a polyaromatic ring compound and metal oxide nanoparticles in a solvent to obtain a mixed solution; and heating the mixed solution to obtain the composite material. According to the method, the polyaromatic ring compound and the metal oxide nanoparticles are mixed and heated, so that the polyaromatic ring compound is in coordination connection with metal atoms on the surfaces of the metal oxide nanoparticles through active groups, a layered superlattice structure is assembled and formed, the metal oxide nanoparticles are promoted to be arranged in order to form a film, and the film-forming property and the crystallization property of the metal oxide film are improved.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a composite material, a preparation method thereof and a light emitting diode. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, are usually composed of II-VI or III-V elements, and their particle size is smaller than or close to the exciton Bohr radius. After nearly 30 years of research and development, significant breakthroughs have been made in the development of quantum dot synthesis technology. Among them, the research on II-VI quantum dots represented by CdSe is becoming more and more perfect, such as: the photoluminescence efficiency is close to 100%, and the peak The peak width is as narrow as 20-30nm, and the device efficiency and device life of red and green quantum dots are close to the requirements of commercial applications. Since all high-quality quantum dots are synthesized by a full solution method, they are very s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50C09D5/00C09D1/00C09D7/63
CPCC09D5/00C09D1/00C09D7/63H10K50/115H10K50/14H10K50/171H10K50/16H10K85/00C07C63/331B82Y30/00B82Y20/00B82Y40/00H10K2102/00H10K2102/331C07C211/54C07C323/62H10K2102/102H10K2102/351H10K2102/361
Inventor 张旋宇聂志文刘文勇
Owner TCL CORPORATION