LED epitaxy and manufacturing method thereof
A manufacturing method and epitaxial technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as overflow and low internal quantum efficiency, and achieve the effects of reducing hole overflow, reducing dislocation density, and reducing ineffective recombination
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Embodiment 1
[0045] Please refer to figure 1 with figure 2 , a LED epitaxial manufacturing method, comprising the steps of:
[0046] S1. Prepare a nitride buffer layer on a patterned substrate.
[0047] Specifically, a nitride buffer layer is prepared on a patterned substrate, and the substrate material includes sapphire (Al2O3) or Si or SiC, etc.;
[0048] Based on the patterned substrate, an AlN buffer layer was plated with AlN sputtering equipment.
[0049] S2. Generating an N-type gallium nitride layer based on the nitride buffer layer.
[0050] Specifically, in this embodiment, an N-type GaN layer is grown in an MOCVD reaction chamber based on the AlN buffer layer, and electrons provided by the N-type GaN layer move toward the P-type GaN layer.
[0051] S3. Alternately generating electron blocking layers and quantum well layers based on the N-type gallium nitride to obtain a composite quantum well layer in which the bottom and top layers are both the electron blocking layers.
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Embodiment 2
[0061] Please refer to figure 2 , an LED epitaxy, including a patterned substrate, a nitride buffer layer, an N-type gallium nitride layer, a composite quantum well layer and a P-type gallium nitride layer.
[0062] Above the patterned substrate are a nitride buffer layer, an N-type gallium nitride layer, a composite quantum well layer and a P-type gallium nitride layer;
[0063] The composite quantum well layer includes an electron blocking layer and a quantum well layer, the electron blocking layer and the quantum well layer are arranged alternately, and the bottom and top layers of the composite quantum well layer are both electron blocking layers;
[0064] The thickness of the quantum well layer is fixed, the thickness of the electron blocking layer increases along the direction away from the N-type gallium nitride, and the thickness of the electron blocking layer ranges from 1 to 20 nm;
[0065] The material of the electron blocking layer is aluminum nitride, the materi...
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Abstract
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