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A thin-film bulk acoustic resonator structure and manufacturing method thereof

A thin-film bulk acoustic wave and manufacturing method technology, which is applied in the field of filters, can solve problems such as performance degradation of thin-film bulk acoustic wave resonators, and achieve the effects of preventing performance degradation, reducing acoustic wave loss, and improving yield

Active Publication Date: 2022-02-18
深圳新声半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention provides a thin film bulk acoustic resonator structure and a manufacturing method thereof, which are used to solve the problem of performance degradation of the thin film bulk acoustic resonator caused by sound wave loss:

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  • A thin-film bulk acoustic resonator structure and manufacturing method thereof
  • A thin-film bulk acoustic resonator structure and manufacturing method thereof
  • A thin-film bulk acoustic resonator structure and manufacturing method thereof

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Embodiment Construction

[0044] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0045] A kind of manufacturing method of thin film bulk acoustic resonator that the present invention proposes, such as figure 1 As shown, the manufacturing method includes:

[0046] Step 1, providing a substrate, and etching a first groove on the substrate;

[0047] Step 2, filling the first groove to form a first sacrificial layer, wherein the upper surface of the first sacrificial layer is at the same level as the upper surface of the substrate;

[0048] Step 3, laying a buffer layer on the substrate and the upper surface of the first sacrificial layer; wherein, the material of the buffer layer is aluminum nitride or aluminum oxide;

[0049] Step 4, laying a se...

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Abstract

The invention provides a film bulk acoustic wave resonator structure and a manufacturing method thereof. The thin film bulk acoustic resonator comprises a substrate, a buffer layer, a first cavity, a second cavity, a first electrode, a deposited piezoelectric layer, a second electrode and a protective layer; the first cavity is composed of the substrate The groove is formed with the buffer layer covered on the upper surface of the substrate; the deposited piezoelectric layer is arranged above the buffer layer, and the lower surface of the raised part of the deposited piezoelectric layer is attached with a first electrode; the first A second cavity is formed between the electrode and the buffer layer; the second electrode is arranged above the deposited piezoelectric layer, and the protective layer covers the second electrode and the exposed surface of the deposited piezoelectric layer.

Description

technical field [0001] The invention provides a film bulk acoustic wave resonator structure and a manufacturing method thereof, belonging to the technical field of filters. Background technique [0002] The resonator is the core component of the filter, and the performance of the resonator directly determines the performance of the filter. Among the existing resonators, the Film Bulk Acoustic Resonator (FBAR) is due to its small size, low insertion loss, large out-of-band suppression, high quality factor, high operating frequency, large power capacity and anti-static shock Good ability and other characteristics, it has a very broad application prospect in modern wireless communication technology. At that time, in the existing resonator, the piezoelectric layer between the adjacent thin film bulk acoustic resonators was connected, and the piezoelectric layer in this region was directly in contact with the substrate, so when the thin film bulk acoustic resonator was working, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/02H03H9/02
CPCH03H3/02H03H9/02015
Inventor 王玉丽魏彬
Owner 深圳新声半导体有限公司