Crucible assembly, crystal pulling furnace and method for pulling single crystal silicon rod
A single crystal silicon rod and component technology is applied in the fields of crucible components, crystal pulling furnaces and single crystal silicon rod pulling, and can solve the problems of uneven nitrogen concentration of single crystal silicon rods.
Pending Publication Date: 2021-12-31
西安奕斯伟材料科技股份有限公司
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Problems solved by technology
[0005] In order to solve the above technical problems, the embodiment of the present invention expects to provide a crucible assembly used in the process of manufacturing nitrogen-doped single crystal silicon rods by Czochralski method, so as to solve the problem of uneven nitrogen concentration in nitrogen-doped single crystal silicon rods , so that the density distribution of BMD in the silicon wafer can be effectively controlled, so as to exert a good gettering effect
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[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention.
[0029] see figure 1 and figure 2 , which shows one implementation of a conventional crystal puller. like figure 1 As shown, the crystal pulling furnace 1 includes: a furnace chamber surrounded by a shell 2 , a quartz crucible 10 disposed in the furnace chamber, a graphite heater 20 , a crucible rotating mechanism 30 and a crucible carrying device 40 . The quartz crucible 10 is carried by the crucible supporting device 40 , and the crucible rotating mechanism 30 is located below the crucible supporting device 40 , and is used to drive the quartz crucible 10 to rotate along the direction R around its own axis.
[0030] When using the crystal pulling furnace 1 to pull a single crystal silicon rod, first, put the high-purity polycrystalline silicon raw material into the quartz...
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The embodiment of the invention discloses a crucible assembly. The crucible assembly comprises: a quartz bearing part used for bearing melt; a quartz substrate part positioned on the outer side of the quartz bearing part; and a silicon material layer located between the quartz substrate part and the quartz bearing part, wherein the quartz bearing part is arranged to be capable of being completely melted in a melt in the drawing process of a single crystal silicon rod, and the thickness of the silicon material layer is set to be at least partially melted into the melt in the drawing process of the silicon single crystal rod. According to the crucible assembly provided by the embodiment of the invention, the silicon material layer can be melted into the melt, and the nitrogen concentration in the melt is diluted, so that the nitrogen concentration in the drawn silicon single crystal rod tends to be uniform in the axial direction.
Description
technical field [0001] The invention relates to the field of semiconductor silicon chip production, in particular to a crucible assembly, a crystal pulling furnace and a method for pulling single crystal silicon rods. Background technique [0002] In the prior art, it is very advantageous to provide such a silicon wafer: the silicon wafer has a crystal defect-free region (Denuded Zone, DZ) extending from the front side to the body and a denuded zone adjacent to the DZ and further extending into the body. Bulk Micro Defect (BMD) area, where the front side refers to the surface of the silicon wafer where electronic components need to be formed. The above-mentioned DZ is important because in order to form electronic components on a silicon wafer, it is required that there are no crystal defects in the formation area of the electronic components, otherwise it will cause failures such as circuit breaks, so that the electronic components are formed in the DZ The influence of cr...
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Patent Timeline
Login to View More IPC IPC(8): C30B15/10C30B15/04C30B15/00C30B29/06
CPCC30B15/10C30B15/04C30B15/00C30B29/06
Inventor 衡鹏张婉婉李阳
Owner 西安奕斯伟材料科技股份有限公司