Multilayer film, optical device, photonic integrated circuit device, and optical transceiver
A technology of photonic integrated circuits and optical devices, which is applied in the fields of optical components, optics, nonlinear optics, etc., and can solve problems such as insufficient modulation efficiency of Si modulators
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no. 1 approach
[0072] Figure 4 is a cross-sectional view of the slot waveguide 21A using the multilayer film 50A according to the first embodiment. For example, slot waveguide 21A is figure 2 One of the eight slot waveguides 21 exemplified in . SiO is formed on the Si substrate 17 2 layer 18, and the SiO 2 A pair of conductors 20 are disposed on layer 18 . In this specification and the appended claims, the terms "on", "over", "above", "under" or "under" do not indicate Absolute orientation, intended to illustrate the positional relationship observed in the film growth or stacking direction. A pair of conductors 20 serve as electrodes for applying an electric field to the slot waveguide, and for this reason, the conductors 20 are hereinafter referred to as "electrodes 20". The electrode 20 may be formed of single crystal Si in which impurity elements such as boron (B) and phosphorus (P) are added to reduce resistance.
[0073] A narrow gap or slit 23 is formed between the two electro...
no. 2 approach
[0094] Figure 9 is a cross-sectional view of the slot waveguide 21B using the multilayer film 50B according to the second embodiment. In a second embodiment, (Pb,La)(Zr,Ti)O 3 (hereinafter, abbreviated as “PLZT”) was used as the perovskite oxide of the third layer 30 included in the multilayer film 50 b. Other device configurations are the same as those in the first embodiment. The same components are denoted by the same reference numerals, and repeated descriptions may be omitted.
[0095] The multilayer film 50B includes a single crystal Si layer 24, a first layer 26 containing Zr, a layer containing ZrO 2 The second layer 27 and the third layer 30 containing PLZT. The first layer 26 , the second layer 27 and the third layer 30 are grown epitaxially on the single crystal Si layer 24 .
[0096] The third layer 30 containing PLZT may be formed by PVD such as vacuum evaporation or sputtering, or may be formed using a coating method such as a sol-gel method. In this examp...
no. 3 approach
[0107] Figure 12 is a cross-sectional view of a slot waveguide 21C using a multilayer film 50C according to the third embodiment. The multilayer film 50C of the third embodiment includes a high-resistance single-crystal Si layer 24 , a first layer 26 containing Zr, a first layer containing ZrO 2 The second layer of 27, SrTiO 3 (STO) layer and a third layer 28 comprising PZT. The first layer 26 , the second layer 27 , the STO layer 32 and the third layer 28 are epitaxially grown on the single crystal Si layer 24 . Compared with the first embodiment, the layer 32 containing STO is inserted in the layer containing ZrO 2 Between the second layer 27 as a main component and the third layer 28 containing PZT as a main component. Other configurations of the multilayer film 51C are the same as those in the first embodiment. The same components are denoted by the same reference numerals, and repeated descriptions may be omitted.
[0108] The multilayer film 50C can be produced by...
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Abstract
Description
Claims
Application Information
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