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A dry method for preparing perovskite layer and perovskite solar device

A technology of perovskite and dry method, which is applied in the field of preparation of perovskite materials, and can solve problems such as environmental pollution and toxicity

Active Publication Date: 2022-02-22
HUANENG CLEAN ENERGY RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the process of preparing the perovskite material layer by the conventional solution method, a large amount of solution is used, which causes environmental pollution and is toxic.

Method used

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  • A dry method for preparing perovskite layer and perovskite solar device

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Experimental program
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Effect test

Embodiment 1~3

[0031] 1) Conductive electrode substrate 102: Take the transparent electrode deposited on transparent FTO as the substrate of the device as an example, the substrate area is not limited (in this case, it is 5×5cm 2 ), such products are mass-produced commercial products that can be used directly. Before use, the surface of the electrode should be ultrasonically treated with deionized water, acetone, and isopropanol for 15 minutes, then cleaned with a UV cleaner for 10 minutes, and dried with nitrogen flow for later use;

[0032] 2) On the conductive electrode substrate, the hole transport layer 104 is prepared by doctor blade coating method. Taking PEDOT:PSS as an example, the slurry used is a commercial PEDOT:PSS (AI 4083) aqueous solution, using isopropanol Dilute according to the volume ratio of 1:3, the coating speed of the blade is 15mm / s; the coating temperature is 55°C; the distance between the blade and the substrate is 50μm; after coating, it is annealed at 90°C in nit...

Embodiment 2

[0041] b) The perovskite solar device prepared by the perovskite light-absorbing layer 106 of composition is recorded as embodiment 2;

[0042] c) The perovskite solar device prepared by the perovskite light-absorbing layer 106 is referred to as Example 3.

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Abstract

The invention provides a method for preparing a perovskite layer by a dry method and a perovskite solar device. The method comprises the following steps: uniformly blending and dispersing iodide and ammonium halide to obtain a perovskite precursor material; the iodide selected from PbI 2 or SnI 2 The amine halide is selected from one or more of methylamine iodine, methylamine bromide, formamidine iodine and formamidine bromide; the perovskite precursor material is sprayed into a film by electrostatic spraying to obtain a film; The film is placed in methylamine gas and then subjected to vacuum heat treatment to obtain a perovskite film. The method does not use solvents, and uses a dry method to prepare the perovskite layer, that is, electrostatic spraying + MA assistance, which reduces the amount of precursor materials used, effectively improves the quality of film formation, reduces non-radiative recombination defects, and the efficiency of the obtained perovskite solar devices higher.

Description

technical field [0001] The invention belongs to the technical field of preparation of perovskite materials, and in particular relates to a dry method for preparing a perovskite layer and a perovskite solar device. Background technique [0002] Perovskite materials are widely used in optoelectronic devices due to their long carrier diffusion length, high carrier mobility, and high photoluminescence quantum yield. It has a good application prospect in flexible devices. [0003] However, in the process of preparing the perovskite material layer by the conventional solution method, a large amount of solution is used, which causes environmental pollution and is toxic. Contents of the invention [0004] In view of this, the object of the present invention is to provide a dry method for preparing a perovskite layer and a perovskite solar device. The method does not use solvents, is environmentally friendly, and the prepared solar device has higher efficiency. [0005] The inven...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L51/42H01L51/46
CPCH10K71/10H10K71/40H10K85/114H10K85/1135H10K85/211H10K30/00Y02E10/549
Inventor 肖平许世森赵志国王力军秦校军刘家梁李梦洁熊继光黄斌赵东明
Owner HUANENG CLEAN ENERGY RES INST