Method for fabricating avalanche photodiode device

Abstract

The present disclosure provides a method for processing an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method comprises forming a first contact region and a second contact region in a semiconductor layer. Further, the method comprises forming a first mask layer above at least a first region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and / or the second mask layer are formed above a second region of the semiconductor layer adjacent to the second contact region. Further, the method comprises forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first region and the second region, and comprises forming an absorption region on the first region using the first mask layer.

Description

technical field [0001] The present disclosure relates to photodetectors, and more particularly to avalanche photodetectors for optical communication, light sensing or quantum communication applications. The present disclosure specifically proposes a method for processing an avalanche photodiode (APD) device, in particular a split absorbing charge multiplying (SACM) APD device. Background technique [0002] In the technical field of APD devices (e.g., photodetectors) for optical communication, optical sensing, or quantum communication given above, receiver sensitivity and operating data rate are key performance requirements because they determine the optical communication chain power consumption of the road. APD devices have great potential to meet these requirements. [0003] Conventional APD devices are typically implemented in two device architectures. The first device architecture was the standard pin form, which is also known as a pin APD device. The second device ar...

AI Technical Summary

Problems solved by technology

However, integrating epitaxially grown stacks into existing silicon photonics platforms is challenging due to epitaxial complexity

Additionally, vertical device designs also require a contact scheme on the absorber region, which can be a yield issue

In addition, epitaxially grown stacks limit the freedom to design devices, as each design requires dedicated epitaxy studies and epitaxy partitions

Images