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Two-dimensional transition metal chalcogenide magnetic field detection device

A technology of chalcogen compounds and transition metals, which is applied in the field of magnetic field detection, can solve the problems of low detection sensitivity of alternating magnetic fields, and achieve good application prospects and high sensitivity

Inactive Publication Date: 2022-01-28
彭彦莉
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional alternating magnetic field detection technology is mainly based on Faraday's law of electromagnetic induction, and the detection sensitivity of alternating magnetic field is low

Method used

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  • Two-dimensional transition metal chalcogenide magnetic field detection device
  • Two-dimensional transition metal chalcogenide magnetic field detection device
  • Two-dimensional transition metal chalcogenide magnetic field detection device

Examples

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Embodiment 1

[0021] The invention provides a two-dimensional transition metal chalcogen compound magnetic field detection device. Such as figure 1 As shown, it includes a substrate 1 , a two-dimensional transition metal chalcogenide layer 2 , a thermally conductive insulating elastic material part 3 , ferric oxide particles 4 , a first electrode 5 , and a second electrode 6 . The two-dimensional transition metal chalcogenide layer 2 is placed on the substrate 1 . The material of the two-dimensional transition metal chalcogenide layer 2 is any one of molybdenum sulfide, molybdenum telluride, molybdenum selenide, tungsten sulfide, tungsten telluride, and tungsten selenide. In practical applications, the material of the two-dimensional transition metal chalcogenide layer 2 is not limited to the above materials. The material of the base 1 is an insulating material. Preferably, the material of the substrate 1 is silicon dioxide or quartz. The thermally conductive and insulating elastic mate...

Embodiment 2

[0024] On the basis of Example 1, such as figure 2 As shown, the surface of the thermally conductive insulating elastic material part 3 is provided with pits, and ferric oxide particles 4 are embedded in the pits. In this way, the ferric oxide particles 4 are closely attached to the inner wall of the pit, and the heat and micro-vibration generated by the ferric oxide particles 4 are more easily transmitted to the two-dimensional transition metal chalcogenide layer 2, thereby more The conductivity characteristic of the two-dimensional transition metal chalcogen compound layer 2 is changed, thereby improving the sensitivity of the detection of the alternating magnetic field. Furthermore, at least half of the ferric oxide particles 4 are embedded in the pits. For example, if the ferric oxide particles 4 are spherical, at least the hemisphere of the ferric oxide particles 4 is confined within the pits. In this way, the micro-vibration of the ferroferric oxide particles 4 can be...

Embodiment 3

[0027] On the basis of Example 2, such as image 3 As shown, a ferric oxide layer 7 is also included, and the ferric ferric oxide layer 7 covers the surface of the thermally conductive insulating elastic material part 3 except for the pits. That is to say, except for the pits, the ferric oxide layer 7 covers the surface of the thermally conductive insulating elastic material portion 3 . In this way, under the action of the alternating magnetic field to be measured, the ferroferric oxide layer 7 also generates heat and micro-vibrations, thereby changing the conductivity of the two-dimensional transition metal chalcogenide layer 2 more through the thermally conductive insulating elastic material part 3. characteristics, thereby further improving the sensitivity of alternating magnetic field detection.

[0028] Furthermore, the ferric oxide layer 7 is in contact with the ferric oxide particles 4 . In this way, the triiron tetroxide layer 7 and the triiron tetroxide particles 4 ...

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Abstract

The invention relates to the field of magnetic field detection, and particularly provides a two-dimensional transition metal chalcogenide magnetic field detection device which is characterized in that a two-dimensional transition metal chalcogenide layer is arranged on a substrate layer, and a heat-conducting insulating elastic material part is arranged in the middle of the two-dimensional transition metal chalcogenide layer; and ferroferric oxide particles are arranged on the heat-conducting insulating elastic material part, and a first electrode and a second electrode are respectively arranged on two sides of the heat-conducting insulating elastic material part on the two-dimensional transition metal chalcogenide layer. During application, the device is placed in an alternating magnetic field of a space to be detected, and magnetic field detection is realized by measuring the change of current between the first electrode and the second electrode. The device has the advantage of high alternating magnetic field detection sensitivity.

Description

technical field [0001] The invention relates to the field of magnetic field detection, in particular to a two-dimensional transition metal chalcogen compound magnetic field detection device. Background technique [0002] Alternating magnetic field refers to the magnetic field generated by alternating current. The magnitude and direction of the magnetic field will change with time according to certain rules. Alternating magnetic fields not only have important applications in iron and steel smelting, biotechnology, and disease treatment, but are also closely related to instrumentation monitoring and disease monitoring. The traditional alternating magnetic field detection technology is mainly based on Faraday's law of electromagnetic induction, and the detection sensitivity of alternating magnetic field is low. Contents of the invention [0003] In order to solve the above problems, the present invention provides a two-dimensional transition metal chalcogenide magnetic fiel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/02H01L43/08H01L43/10H10N50/80H10N50/10
CPCH10N50/80H10N50/85H10N50/10
Inventor 彭彦莉
Owner 彭彦莉