Composite phosphorus diffusion source, preparation method thereof and semiconductor doping processing method

A phosphorus diffusion and semiconductor technology, applied in the field of composite phosphorus diffusion source and its preparation, can solve the problems of inaccurate control of impurity source concentration, high environmental requirements, high toxicity of dopant source, etc., to reduce capital investment, meet processing needs, The effect of improving production efficiency

Pending Publication Date: 2022-02-11
ZHEJIANG SHINING ELECTRONICS MATERIALS CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0010] The traditional phosphorus diffusion process mainly uses phosphorus oxychloride as the doping source, but the doping source is very toxic, the diffusion process has high requirements on the environment, and the system is strictly required to be airtight during use, and the repeatability and stability are not good. , impurity source concentra

Method used

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Examples

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Example Embodiment

[0021] Example 2, first, a composite phosphorus diffusion source is prepared, and the specific step is: 1, 40 parts of the n-silicate and 40 parts of ethanol are uniformly heated to 65 ° C; 2, the mixture prepared in step 1. The water was added to 5 parts by mass, and after 3 hours were insulated at 65 ° C, 40 parts of ethyl acetate were uniformly mixed with 4 parts of the pentoxide by mass fraction, and then the addition was prepared by step 2. In the mixture, stirred for 2 h to uniform, it was reduced to room temperature to obtain a compound phosphorus diffusion source. In other embodiments, the step 4 may also be included, and the mixing solution prepared in step 3 is filtered by a mixture of 0.5 μm.

[0022] The resulting composite phosphorus diffusion source was formed of 40 parts of n-silicate, 40 parts of ethyl acetate, 40 parts of pentoxide, 40 parts of ethanol, and 5 parts of ethanol. The viscosity of the product can meet the coating requirements, and the phosphorus conte...

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Abstract

The invention discloses a composite phosphorus diffusion source, a preparation method thereof and a semiconductor doping processing method. The composite phosphorus diffusion source is prepared by mixing the following components in parts by mass: 20-22 parts of tetraethoxysilane, 20-40 parts of ethyl acetate, 1-11 parts of phosphorus pentoxide, 35-40 parts of ethanol and 3-5 parts of water. The diffusion source can realize accurate control of the phosphorus doping concentration by controlling the film thickness and the content of phosphorus in the composite phosphorus diffusion source. The method is more environment-friendly, an ion implanter is not needed in the diffusion process, capital investment of the equipment is reduced, operation is simple, the whole diffusion process is completed in a diffusion furnace at a time, secondary annealing is not needed, the processing requirement of large junction depth products can be met, and production efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of composite phosphorus diffusion source and its processing method and semiconductor processing, and in particular relates to a composite phosphorus diffusion source and its preparation method and semiconductor doping processing method. Background technique [0002] Diffusion source is an essential microelectronic chemical in the doping process of semiconductor device manufacturing. The doping sources used in different doping processes are different, and the doping processes are mainly divided into two types: thermal diffusion and ion implantation. [0003] Ion implantation is to bombard the surface of the silicon wafer with a high-energy ion beam. At the doping window, impurity ions are implanted into the bulk silicon, while in other areas that do not need to be doped, the impurity ions are shielded by the protective layer on the silicon surface, thereby Complete selective doping. During the ion implantat...

Claims

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Application Information

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IPC IPC(8): H01L21/22H01L21/225H01L21/324
CPCH01L21/2225H01L21/2252H01L21/324
Inventor 阮岳峰其他发明人请求不公开姓名
Owner ZHEJIANG SHINING ELECTRONICS MATERIALS CO LTD
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