Composite phosphorus diffusion source, preparation method thereof and semiconductor doping processing method
A phosphorus diffusion and semiconductor technology, applied in the field of composite phosphorus diffusion source and its preparation, can solve the problems of inaccurate control of impurity source concentration, high environmental requirements, high toxicity of dopant source, etc., to reduce capital investment, meet processing needs, The effect of improving production efficiency
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[0021] Example 2, first, a composite phosphorus diffusion source is prepared, and the specific step is: 1, 40 parts of the n-silicate and 40 parts of ethanol are uniformly heated to 65 ° C; 2, the mixture prepared in step 1. The water was added to 5 parts by mass, and after 3 hours were insulated at 65 ° C, 40 parts of ethyl acetate were uniformly mixed with 4 parts of the pentoxide by mass fraction, and then the addition was prepared by step 2. In the mixture, stirred for 2 h to uniform, it was reduced to room temperature to obtain a compound phosphorus diffusion source. In other embodiments, the step 4 may also be included, and the mixing solution prepared in step 3 is filtered by a mixture of 0.5 μm.
[0022] The resulting composite phosphorus diffusion source was formed of 40 parts of n-silicate, 40 parts of ethyl acetate, 40 parts of pentoxide, 40 parts of ethanol, and 5 parts of ethanol. The viscosity of the product can meet the coating requirements, and the phosphorus conte...
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