Semiconductor device and method of manufacturing the same
A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as increased influence of surface area volume, melting point, and sintering temperature drop
Pending Publication Date: 2022-02-18
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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- Description
- Claims
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Problems solved by technology
[0004] Generally, it is known that when the particle size of metal particles is reduced to nanometer size and the number of constituent atoms per particle decreases, the influence of the surface area on the volume of the particles increases sharply, and the melting point and sintering temperature drop significantly compared to bulk metal particles.
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[0054] In the semiconductor device according to the embodiment of the present disclosure, since the thickness of the bonding layer composed of a sintered body of metal particles having an average particle diameter of nanometer order is thicker than before, even when used in a high-temperature environment, the possibility of Cracks generated in the bonding layer can improve bonding reliability.
[0055] In the conventional semiconductor devices disclosed in Patent Document 1 and Patent Document 2, thermal stress exists in the bonding layer due to the thermal stress between the electrodes of the circuit board and the bonding layer due to the repetition of high temperature and low temperature such as 175°C to 300°C, for example. When cracks are generated and good bonding reliability cannot be obtained.
[0056] In the conventional semiconductor device disclosed in Patent Document 3, stress applied to the entire bonding layer is relieved by intentionally generating cracks at local...
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Abstract
A semiconductor device 1 includes an insulation board 2, an electrode 3 provided on the insulation board, a bonding layer 5 provided on the electrode and made of a sintered body of metal particles having an average particle size of nano-order, and a semiconductor element 6 bonded to the electrode 3 via the bonding layer 5. A layer thickness of the bonding layer is greater than or equal to 220 mum and less than or equal to 700 mum.
Description
technical field [0001] The present disclosure relates to a semiconductor device and a method of manufacturing the same. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor: Insulated Gate Bipolar Transistor), MOSFET (Metal-oxide-semiconductor Field-effect Transistor: Metal oxide Semiconductor field effect transistors), diodes and other vertical semiconductor components. Electrodes made of metal metallization are formed on the front and back surfaces of these semiconductor elements, and in the case of general semiconductor devices, the back surface electrodes on the back side of the semiconductor elements are connected to the circuit board via solder joints. [0003] In a bonding material used for a semiconductor device for power conversion, there is a tendency for the heat generation of a semiconductor element to increase, and thus high heat resistance is desired. However, currently, no lead-free solder material having high heat resistance has been found....
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IPC IPC(8): H01L23/488H01L23/498H01L21/603
CPCH01L24/32H01L23/49811H01L24/83H01L2224/3201H01L2224/3205H01L2224/32151H01L2224/32155H01L2224/32225H01L2224/32501H01L2224/83203H01L2224/8384H01L23/3735H01L24/27H01L2224/29339H01L2224/83192H01L2224/2784H01L2224/27505H01L2224/32058H01L24/29H01L2924/10254H01L2924/10272H01L2924/10329H01L2924/1033H01L2924/13055H01L2924/13091H01L2924/1203H01L2224/29083H01L2224/29017H01L2224/27332H01L2224/27901H01L2224/2747H01L2224/83447H01L2224/83439H01L2224/29239H01L2224/83455H01L2224/83464H01L2224/83466H01L2224/29294H01L2224/83424H01L2224/293H01L2224/83469H01L2224/83444H01L2924/00015H01L2924/0132H01L2924/01013H01L2924/00014H01L2224/29139
Inventor 越智正三北浦秀敏
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD