Method and system for testing charge collection resistance of germanium-silicon heterojunction bipolar transistor

Abstract

The invention discloses a test method and system for charge collection resistance of a germanium-silicon heterojunction bipolar transistor, and the method comprises the steps: testing a to-be-tested device, and recording a first test result; screening out a to-be-reinforced device based on the first test result; grouping and numbering the to-be-reinforced devices, respectively setting different neutron fluence for different groups of to-be-reinforced devices, and carrying out neutron irradiation reinforcement treatment on the to-be-reinforced devices to enable each group of reinforced devices to reach respective predetermined neutron fluence value; testing each group of reinforced devices to obtain a second test result; determining a target reinforcing device according to the comparison of the second test result and the first test result; and determining a target neutron fluence value, wherein the target neutron fluence value is a predetermined neutron fluence value corresponding to the target reinforcement device. The influence of different radiation factors on the performance of the device in the space extreme radiation environment can be analyzed, and reference is provided for knowing the reliability of the device in the space extreme environment and providing corresponding reinforcement measures.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a test method and system for anti-charge collection of germanium-silicon heterojunction bipolar transistors. Background technique [0002] Since the 20th century, with the rapid development of aerospace technology and nuclear technology in various countries in the world, more and more electronic devices have been widely used in radiation environments. Due to the complex radiation environment, when electronic components are placed in the radiation environment, their performance will be affected to varying degrees, and it may even cause the failure of the entire circuit system and cause serious losses. Therefore, the working life of the electronic system in the radiation environment has become an important factor to measure the radiation resistance of electronic devices. According to statistics, the failures caused by space radiation account for about 40% of spacecraft fa...

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Problems solved by technology

However, there are no relevant publications on the effects of neutron radiation damage on the electrical characteristics of devices and the application in radiation resistance strengthening.

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