Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

IGBT device and manufacturing method thereof

A device and conductivity type technology, applied in the field of power semiconductor devices, can solve problems such as gate charging displacement current, and achieve the effect of EMI noise suppression and enhanced controllability

Active Publication Date: 2022-02-25
VANGUARD SEMICON CORP
View PDF14 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem mainly solved by the present invention is the technical problem that the collector hole current generates the displacement current for charging the grid when the existing IGBT device is turned on transiently

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • IGBT device and manufacturing method thereof
  • IGBT device and manufacturing method thereof
  • IGBT device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Please refer to figure 1 , the present embodiment provides an IGBT device, which includes at least one cell, the cell includes a first electrode 1, a second electrode 2, and a semiconductor unit located between the first electrode 1 and the second electrode 2, and the semiconductor unit may include Base region 3 , source region 4 , drift region 5 , collector region 6 , trench gate structure 7 and PN junction structure 8 . The following description will be made by taking the IGBT device as an N-channel enhancement type as an example.

[0036] exist figure 1 In the illustrated embodiment, the first electrode 1 corresponds to the emitter electrode, covering the first surface (such as the upper surface) of the device, and the second electrode 2 corresponds to the collector electrode, covering the second surface (such as the lower surface) of the device. surface).

[0037] The base region 3 has the first conductivity type, for example, the base region 3 is a P-type base r...

Embodiment 2

[0061] In the following, description will be made by taking the IGBT device as an N-channel IGBT device as an example. In an embodiment, the first conductivity type is P type, and the second conductivity type is N type.

[0062] Please refer to Figure 4 , the present embodiment provides a method for manufacturing an IGBT device, comprising:

[0063] Step 1: Provide a substrate, the substrate includes a collector region 6, a buffer layer 9, a drift region 5 and a base region 3 stacked from bottom to top, or the substrate includes a collector region 6 stacked from bottom to top, a drift Region 5 and Base Region 3.

[0064] Such as Figure 5 As shown, the above collector region 6, buffer layer 9, drift region 5 and base region 3 can be formed by any existing method. For example, a single crystal silicon substrate is provided, and the substrate is heavily doped with P type to obtain a P+ collector region 6, and a buffer layer 9 or a drift layer is epitaxially formed on the up...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an IGBT device and a manufacturing method thereof, the IGBT device comprises at least one cell, the cell comprises a first electrode, a second electrode and a semiconductor unit located between the first electrode and the second electrode, the semiconductor unit comprises a base region, a source region, a drift region and a collector region, a first PN junction is formed between the source region and the base region, and the IGBT device further comprises a trench gate structure and a PN junction structure, the PN junction structure is formed in the gate dielectric layer and located on at least one side, away from the channel region, of the gate, a first conduction type region in the PN junction structure is electrically connected with the first electrode, and a second conduction type region in the PN junction structure is floated in the gate dielectric layer. In the forward voltage withstanding process, the potential of the second conductive type region is raised, and the voltage of the second electrode is kept unchanged, so that charges on a depletion layer capacitor cannot be discharged, and the second conductive type region keeps relatively high potential, so that the potential at the bottom of a surrounding trench gate is raised, hole accumulation at the bottom of a gate dielectric layer is inhibited, and the generation of displacement current is inhibited.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, in particular to an IGBT device and a manufacturing method thereof. Background technique [0002] As the mainstream device of new power semiconductor devices, IGBT devices are the core of power electronic devices and systems. IGBT has the advantages of both MOS tube and BJT (Bipolar Junction Transistor) transistor, and has excellent characteristics such as low conduction voltage drop and driving power, high input impedance, high breakdown voltage and high switching frequency, and its application voltage range is relatively Wide, can greatly improve the power efficiency and quality of equipment. [0003] During the continuous development of IGBT, FP IGBT (Floating P-base) structure appeared. Due to the introduction of the floating P region, holes will be accumulated when the IGBT is turned on, which will increase the hole current density flowing from the bottom of the trench ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/423H01L29/06H01L29/739H01L21/331H01L21/28
CPCH01L29/7398H01L29/7397H01L29/66348H01L29/401H01L29/42364H01L29/0696Y02B70/10
Inventor 李伟聪姜春亮雷秀芳
Owner VANGUARD SEMICON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com