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Manufacturing method of micro-electro-mechanical system device and micro-electro-mechanical system device

A technology of a micro-electromechanical system and a manufacturing method, which is applied in chemical instruments and methods, manufacturing microstructure devices, and microstructure devices without moving elements, etc. problems, to achieve high aspect ratio, improve yield, and not easy to fall off

Pending Publication Date: 2022-03-01
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, due to the relatively low selectivity ratio of some materials to be etched to photoresist, for example, the high-depth and wide silicon oxide microstructure obtained by the existing silicon oxide etching technology is far from meeting the needs of the MEMS field, which is urgently needed. Requires technical support for advanced etching equipment and etching methods suitable for obtaining high-depth and wide microstructure silicon oxide, quartz and glass materials
[0004] For high-depth-width silicon oxide microstructures, due to the problem of etching selectivity, the existing technology generally uses metal as a mask, but the combination of metal mask and silicon oxide is not tight, and it is easy to fall off, resulting in a decrease in device yield.

Method used

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  • Manufacturing method of micro-electro-mechanical system device and micro-electro-mechanical system device
  • Manufacturing method of micro-electro-mechanical system device and micro-electro-mechanical system device

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Embodiment 2

[0108] A method of manufacturing a MEMS device, comprising:

[0109] Step S301: forming a patterned metal oxide mask layer on the non-etching area on the front side of the wafer;

[0110] Step S302: performing dry etching on the area to be etched on the front side of the wafer, and forming a MEMS device with a channel structure on the front side of the wafer;

[0111] Step S303: removing the metal oxide mask layer by wet etching.

[0112] The difference between this embodiment and Embodiment 1 is that the method of forming a patterned metal oxide mask layer on the non-etching area on the front surface of the wafer is different. Step S301 of this embodiment includes the following steps S401-S405:

[0113] Step S401: forming a metal organic compound gel layer on the front side of the wafer;

[0114] Specifically, a metal-organic compound gel is prepared by a sol-gel method; then, the metal-organic compound gel is spin-coated on the front side of the wafer to form a metal-organ...

Embodiment 3

[0126] The embodiment of the present invention also proposes a MEMS device, which is manufactured by using the manufacturing method of the MEMS device in any of the above embodiments.

[0127] In a specific embodiment, a silicon oxide optical waveguide device is prepared based on the MEMS device manufacturing method of the above embodiment, and step S101 (or step S301) of the above embodiment 1 is performed to prepare a metal oxide ( Such as zinc oxide) mask layer, the structure of the mask layer is as follows Figure 5 As shown, SEM characterization is about 1 micron thick.

[0128] Then perform step S102 to carry out plasma dry etching, and the formula is as shown in Table 1:

[0129] Table 1 dry etching process formula

[0130]

[0131] After the etching is completed, perform steps S103-S104, remove the metal oxide mask layer by wet etching, and divide the multiple MEMS devices on the wafer into independent MEMS by backside thinning or mechanical dicing device.

[01...

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Abstract

The invention discloses a manufacturing method of a micro-electro-mechanical system device and the micro-electro-mechanical system device. The manufacturing method comprises the following steps: forming a patterned metal oxide mask layer in a non-etching region on the front surface of a wafer; performing dry etching on the to-be-etched region on the front surface of the wafer, and forming a micro-electro-mechanical system device with a pore channel structure on the front surface of the wafer; and removing the metal oxide mask layer through wet etching. A device structure with a high aspect ratio is obtained on a to-be-etched material with a low selection ratio.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and more specifically, to a method for manufacturing a MEMS device and the MEMS device. Background technique [0002] With the development of micro-electro-mechanical system (English full name Micro Electro Mechanical System, MEMS for short) technology, silicon material began to rise in the field of microelectronics as a low-cost, easy-to-process structural material. However, as a functional material, the performance of silicon materials still has many deficiencies. In the field of new MEMS devices-photoelectric transmission, its transmission loss is relatively large, and many various materials show better performance than silicon (quality Factor Q). In addition to being used as a structural material in mechanical devices, silicon oxide can also be used as a functional material in optical devices. Therefore, in the technical fields of optical waveguide, microwave tec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B1/00
CPCB81C1/00531B81C1/00396B81B1/002
Inventor 袁仁志林源为
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD