Sputtering target
A technology for sputtering targets and elements, which is used in sputtering, vacuum evaporation, ion implantation, etc., can solve problems such as technical difficulties, and achieve the effect of good yield and suppressing particle generation.
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Embodiment 1
[0130] The SC raw material of the purity 4n of the purity 4n and the purity 3N was put into the powder manufacturing apparatus, followed by adjusting the powder manufacturing apparatus to 5 × 10 -3 The vacuum atmosphere of PA is melted by melting the Al raw material and the SC raw material at a melting temperature of 1700 ° C. Next, the melt is blown to the melt, and the melt is dissolved, and the hair is solidified, and the particle size is 150 μm or less. Al-40 atom% SC powder (in this case, Al is 60 atom% Al, but omitted the annual percentage of the atomic percentage of Al; the same later). Thereafter, the Al-40 atom% SC powder is filled into a carbon mold for discharge plasma sintering (later, also referred to as SPS sintered). Next, the mixed powder is sealed by a mold and a punch or the like by a mold and a punch, and a mold filled with a mixed powder is disposed in the SPS device (Model: SPS-825, SPS SINTEX.). Further, as a sintering condition, the sintering temperature is ...
Embodiment 2
[0132] In Example 1, an Al-30 atom% SC powder having a particle diameter of 150 μm or less was produced instead of Al-40 atom% SC powder, and the AL-30 atomic SC target of φ50.8 mm × 5 mmT was produced in this regard. The Al-40 atom% SC target, except that the Al-30 atom% SC target of Example 2 is obtained in the same manner. Next, the content of the al-30 atom% SC target of Example 2 was determined in the same manner as in Example 1. The content of chlorine is 3.7 ppm. Target contains Al 2 SC and ALSC two intermetallic compounds have a first tissue. Next, an Al-30 atom% SC target of Example 2 was used instead of the Al-40 atom% SC target of Example 1, except that the same manner in the same manner in the same manner as in Example 1 was in the same manner as in Example 1. AL-30 atom% SC film was formed at a thickness of 1 μM. At this time, the sputtering condition of the Al-30 atom% SC target was observed, the voltage stabilized, not confirmed to abnormally discharge, etc., the fi...
Embodiment 3
[0134] In Example 1, an AL raw material and purity 3N of the purity 4n were used in place of the SC raw material of the purity 4n and the SC raw material using the purity 4n, in the same manner, of the same manner of 150 μm or less, in the same manner. Atom% Ti powder. Next, an Al-40 atom% Ti target of φ50.8 mm × 5 mmT was manufactured in place of the Al-40 atom% SC target of Example 1, in the same manner as in Example 1, in the same manner as in Example 1. Al-40 atom% Ti target. Next, the content of the AL-40 atom% Ti target of Example 3 was determined in the same manner as in Example 1. The content of chlorine is 4.0 ppm. Target contains Al 2 Ti and Alti two intermetallic compounds have a first tissue. Next, the Al-40 atom% Ti target of Example 3 instead of the Al-40 atom% SC target of Example 1, in the same manner as in the same manner in the same manner as in Example 1, in the same manner as in Example 1. AL-40 atom% Ti film was formed at a thickness of 1 μM. At this time, the...
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