Electrode material of on-chip integrated supercapacitor and preparation method thereof
A technology for supercapacitors and electrode materials, applied in hybrid capacitor electrodes, hybrid/electric double layer capacitor manufacturing, nanotechnology for materials and surface science, etc., can solve complex preparation processes, low energy storage performance, and low integration to avoid disordered accumulation, increase specific surface area, and improve energy storage performance
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Embodiment 1
[0045] The preparation process of the electrode material in this embodiment is as follows: figure 1 shown.
[0046] S10, using physical vapor deposition method such as magnetron sputtering on Si / SiO 2 Deposit a 100nm Au layer on the substrate as a nano-conductive layer, and also use physical vapor deposition such as thermal evaporation to grow a 1μm Al layer as a precursor material layer;
[0047] S20. Prepare a photoresist plate with an interdigitated pattern according to the requirements, spin-coat photoresist on the substrate for preparing the Au layer and an Al layer, and use the interdigitated photoresist plate to perform ultraviolet exposure, after developing, fixing, and baking. A patterned photoresist layer is obtained on the Au / Al layer; the Au / Al layer not protected by the patterned photoresist layer is removed by ion etching to obtain Si / SiO 2 The interdigitated nanoconductive layer / precursor material layer covered with photoresist on the substrate, Au / Al; then ul...
Embodiment 2
[0053] Steps S10-S30 of this embodiment are the same as steps S10-S30 of Embodiment 1.
[0054] S40, using a platinum grid electrode as an anode, using Ag / AgCl reference electrode, an oxygen-free conductive copper sheet and a nano-conductive layer in close contact to form a working cathode, assembling a three-electrode system electrochemical deposition device, connecting the electrochemical workstation and each electrode, Inject a certain amount of 0.038mol / LNiSO 4 After the electrolytic deposition solution was left standing for 5-60 minutes, the electrolytic deposition solution and the interdigitated integrated Au / AAO layer were fully infiltrated. With constant voltage V dep =-2V, carry out Ni nanotube layer deposition based on the sacrificial layer, keep room temperature T=25°C during the deposition process, deposition time t dep＝ 3000s, deionized and cleaned to obtain an ordered array of Ni nanotubes with a secondary structure, and the average wall thickness of Ni nanotub...
Embodiment 3
[0058] Steps S10-S40 of this embodiment are the same as steps S10-S40 of Embodiment 2.
[0059] S50, placing the ordered Ni nanotube array prepared in S40 in hydrogen peroxide (H 2 o 2 ) solution, so that the oxidation reaction of the Ni nanotube inner wall generates a NiO nanotube layer, and the oxidation reaction time t is controlled OX =1200s, obtain the thickness d of NiO nanotubes TMOx =~15nm Ni@NiO ordered nano-layer coaxial tube array
[0060] The oxidation in step S50 of this embodiment can be performed by directly adding hydrogen peroxide solution to the original electrochemical deposition device after removing the electrode and fully cleaning it to achieve an integrated operation.
[0061] S60 step is with the step S60 of embodiment 2, obtains integrated Si / SiO 2 Interdigitated patterned Au / Ni@NiO ordered nano-layer coaxial tube array supercapacitor electrode material on the substrate.
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Abstract
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