High-power chip heat dissipation structure and preparation method thereof
A technology for chip heat dissipation and heat dissipation structure, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., and can solve problems such as high-power chip performance impact, chip temperature uniformity crossing, and device failure.
Pending Publication Date: 2022-03-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
[0007] The purpose of the present invention is to provide a high-power chip heat dissipation structure and its preparation method, in order to solve the current high-power chip exposure to external electromagnetic interference, the risk of radio frequency signal distortion, etc. The heat dissipation structure may cause additional parasitic parameters, which will affect the performance of high-power chips, and the temperature uniformity in the chip will cross, resulting in local high-temperature hot spots, large thermal stress, etc., resulting in device failure.
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[0036]In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same or similar items with basically the same function and effect. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their sequence is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the number and execution order, and words such as "first" and "second" do not necessarily limit the difference.
[0037] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used as examples, illustrations or illustrations. Any embodiment or design described herein as "exemplary" or "for example" should not be construed as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exe...
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The invention discloses a high-power chip heat dissipation structure and a preparation method thereof, and relates to the technical field of microelectronic heat dissipation. The high-power chip heat dissipation structure comprises a heat dissipation assembly located on a high-power chip, the heat dissipation assembly and the high-power chip are bonded together, and the projection of the heat dissipation assembly on the high-power chip at least covers a heating junction area of a device layer of the high-power chip. The cooling liquid can be led to the heating junction area on the front face of the high-power chip through the heat dissipation assembly, a radio frequency signal of the high-power chip is shielded through the shielding piece, the high-power chip and the heat dissipation assembly are isolated through the shielding piece, and the shielding piece can serve as a heat diffusion layer to diffuse heat gathered in the chip. The heat dissipation assembly is connected to the shielding piece, so that heat generated by the chip is dissipated and taken away through the front face of the chip, the heat transfer path is shortened, and the signal shielding requirement of the high-power chip and the heat dissipation requirement of the chip are met.
Description
technical field [0001] The invention relates to the technical field of microelectronic heat dissipation, in particular to a high-power chip heat dissipation structure and a preparation method thereof. Background technique [0002] With the development of semiconductor technology, the performance of semiconductor chips is constantly improving, and the power applied to the chip is also increasing, which brings about the problem of increased thermal power consumption of the chip. If the heat generated by the chip cannot be dissipated and taken away in time, it will cause The temperature of the chip rises sharply, which seriously affects the performance and life of the chip and other parameters. At the same time, the heat generation in the heat-generating junction area of the chip is often uneven, which will lead to uneven temperature distribution on the chip and a large temperature gradient in the chip. On the one hand, local high-temperature hot spots will be generated, whic...
Claims
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Login to View More IPC IPC(8): H01L23/473H01L23/552H01L21/50
CPCH01L23/473H01L23/552H01L21/50
Inventor 焦斌斌余立航康玄武孔延梅
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI