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Photoresist side wall morphology control method

A control method and photoresist technology, which are applied in micro-lithography exposure equipment, photosensitive material processing, photo-plate making process exposure devices, etc., can solve the problem of affecting the quality of process patterning, difficulty in consistent sidewall morphology, photoresist Solve problems such as differences in sidewall morphology, achieve high-quality graphics transfer, overcome the deterioration of conversion quality, and solve the effects of inconsistent sidewall morphology

Pending Publication Date: 2022-04-01
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] For the same fixed thickness photoresist on different substrate materials, due to the difference in substrate reflectivity, the optical path difference between the exposure of the sidewall of the photoresist and the incident light is exactly an integer multiple of the wavelength of the light source, resulting in The difference in morphology; different pattern sizes and the obtained sidewall morphology are also difficult to be consistent; thus affecting the patterning quality in the subsequent process

Method used

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  • Photoresist side wall morphology control method
  • Photoresist side wall morphology control method
  • Photoresist side wall morphology control method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The photoresist sidewall morphology control method provided in this embodiment includes the following steps:

[0041] (1) Coating: Use a coating developer to apply HMDS (hexamethyldisilazane) on the surface of the wafer to enhance its adhesion, then center it, and spin-coat 1.8um thick photoresist AZ 703;

[0042] (2) Pre-baking: Bake at 120°C for 90s and then cool for 30s to remove excess solvent in the photoresist to avoid dirt and dust on the silicon wafer;

[0043] (3) Exposure: Exposure to the silicon wafer cured by the photoresist on the surface of the prebaking, wherein the exposure dose is 345ms and the focus is 0;

[0044](4) Developing: Position the exposed photoresist Si wafer with a thickness of 1.8um in the center of the glue developing machine, automatically develop for 60s, and dissolve the photoresist in the exposure area to obtain a pattern;

[0045] (5) Predefine the size of the photoresist pattern through the exposure, and there is residual photoresi...

Embodiment 2

[0050] This embodiment is the same as the step of embodiment 1 except that silicon carbide is used as the substrate material, the exposure dose is 315 ms, and the focus is -1.5.

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Abstract

The invention provides a photoresist side wall morphology control method. The photoresist side wall morphology control method comprises the following steps: positioning the center of a pretreated wafer and coating photoresist; sequentially carrying out pre-baking, exposure and development on the wafer to obtain a photoresist pattern; predefining the size of the photoresist pattern; removing the residual photoresist and the hard film; according to the technical scheme provided by the invention, the pattern conversion quality caused by different substrate materials and pattern sizes is greatly improved, the process is improved, and the cost is reduced.

Description

technical field [0001] The invention relates to a semiconductor device preparation process, in particular to a photoresist side wall shape control method. Background technique [0002] With the advancement of integrated circuit manufacturing technology and the reduction of feature size, the integration of integrated circuit chips is getting higher and higher. The use of photoresist to achieve precise transfer of mask patterns has become a key factor that directly affects chip integration and yield. . According to the process requirements, the serious deformation of the photoresist sidewall morphology will directly affect the patterning quality in the subsequent process. Therefore, the quality of the photoresist sidewall morphology is an important parameter to distinguish the process capabilities of various photoresists. Subsequent processes of different photolithography, such as etching, wet etching, and metal lift-off, have different requirements on the sidewall morphology...

Claims

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Application Information

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IPC IPC(8): H01L21/027G03F7/38G03F7/20
Inventor 葛欢田亮吴沛飞吴斌齐向
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD