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Piezoelectric ceramic material, application of piezoelectric ceramic material and preparation method of piezoelectric ceramic material

A technology of piezoelectric ceramics and piezoelectric charges, applied in the direction of piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve the problem of low depolarization temperature of piezoelectric materials and inability to meet high temperature service requirements, etc. question

Inactive Publication Date: 2022-04-05
TANGSHAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in some special high-temperature environments, such as aerospace, oil exploration, nuclear industry and other fields, due to the high temperature of the working environment (200-300 ° C, or even higher), the existing PZT system piezoelectric materials have a low depolarization temperature and cannot meet the requirements. High temperature service requirements

Method used

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  • Piezoelectric ceramic material, application of piezoelectric ceramic material and preparation method of piezoelectric ceramic material
  • Piezoelectric ceramic material, application of piezoelectric ceramic material and preparation method of piezoelectric ceramic material
  • Piezoelectric ceramic material, application of piezoelectric ceramic material and preparation method of piezoelectric ceramic material

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preparation example Construction

[0040] [Preparation method of piezoelectric ceramic material]

[0041] The preparation method of the piezoelectric ceramic material is used to prepare the aforementioned piezoelectric ceramic material, including steps: Step 1: the raw materials ZnO and Nb 2 o 5 Weigh according to the chemical molar ratio, ball mill in a horizontal ball mill for 4 hours with anhydrous ethanol as the medium, and then calcined at 1000°C for 4 hours to synthesize ZnNb 2 o 6 Precursor; Step 2: Using ZnNb 2 o 6 The precursors are zinc and niobium sources, and the raw material Pb 3 o 4 、TiO 2 、 Bi 2 o 3 、Sc 2 o 3 with ZnNb 2 o 6 , weighed according to the chemical molar ratio of the elements in the piezoelectric ceramic material, put the weighed raw materials into a ball mill jar, and place them in a horizontal ball mill with absolute ethanol as the medium for ball milling for 24 hours to obtain powder; step 3: bake After the dry powder is calcined, it is cooled to room temperature with ...

Embodiment 1

[0049] According to the chemical formula zBiScO 3 -yPb(Zn 1 / 3 Nb 2 / 3 )O 3 -xPbTiO 3 , where the value of x is 0.60, the value of y is 0.05, and the value of z is 0.35.

[0050] Step 1: the raw materials ZnO and Nb 2 o 5 Weigh according to the chemical molar ratio, ball mill in a horizontal ball mill for 4 hours with anhydrous ethanol as the medium, and then calcined at 1000°C for 4 hours to synthesize ZnNb 2 o 6 Precursor;

[0051] Step 2: Using ZnNb 2 o 6 The precursors are zinc and niobium sources, and the raw material Pb 3 o 4 、TiO 2 、 Bi 2 o 3 、Sc 2 o 3 with ZnNb 2 o 6 , weighed according to the chemical molar ratio of the elements in the piezoelectric ceramic material, put the weighed raw materials into a ball mill jar, put them in a horizontal ball mill with absolute ethanol as the medium, and mill them for 24 hours to obtain the powder, and put them under the condition of 100°C drying;

[0052] Step 3: After calcination at 850°C for 2 hours, cool dow...

Embodiment 2

[0058] According to the chemical formula zBiScO 3 -xPbTiO 3 -yPb(Zn 1 / 3 Nb 2 / 3 )O 3 , where x takes a value of 0.61, y takes a value of 0.05, z takes a value of 0.34, and others are the same as in embodiment 1.

[0059] The obtained piezoelectric ceramic materials were assembled into a single-layer cantilever energy harvester, and the high-temperature energy harvesting performance test was carried out. The test results are shown in Table 1.

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Abstract

The invention discloses a piezoelectric ceramic material, application of the piezoelectric ceramic material and a preparation method of the piezoelectric ceramic material. The piezoelectric ceramic material disclosed by the invention is represented by a formula I: zBiScO3-yPb (Zn1 / 3Nb2 / 3) O3-xPbTiO3, in the formula I, x, y and z respectively represent the molar fractions of PbTiO3, Pb (Zn1 / 3Nb2 / 3) O3 and BiScO3, x is more than or equal to 0.58 and less than or equal to 0.64, y is more than 0 and less than or equal to 0.05, and z = 1-x-y; when the temperature is 300 DEG C, the piezoelectric charge constant d33 of the piezoelectric ceramic material is 426-655 pC / N. The piezoelectric ceramic material disclosed by the invention can be applied to piezoelectric energy collection devices in the high-temperature field, and tests show that the piezoelectric ceramic material disclosed by the invention can meet the requirements of self-powered microelectronic devices on electric energy in the ultrahigh-temperature field of 300 DEG C.

Description

technical field [0001] The invention relates to the field of high-temperature piezoelectric ceramic materials, in particular to a piezoelectric ceramic material, an application of the piezoelectric ceramic material and a preparation method thereof. Background technique [0002] With the continuous advancement of piezoelectric energy harvesting technology, piezoelectric energy harvesters convert the vibration energy that exists widely in the environment into electrical energy, which can continuously supply power for small and low-power electronic devices, thereby improving the performance of related electronic devices in wireless sensing, data Application capabilities in transmission, structural health monitoring and other fields. [0003] Pb(Zr,Ti)O that has been commercially applied 3 (PZT for short) system piezoelectric material has a Curie temperature of about 180-386°C, which can meet the service requirements for piezoelectric energy harvesting applications in conventio...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/472C04B35/622C04B41/88H01L41/187H10N30/853
Inventor 赵海燕
Owner TANGSHAN NORMAL UNIV