Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and method of manufacturing the same

A technology of semiconductors and devices, which is applied in the field of semiconductor devices and manufacturing, and can solve the problems of insulation film degradation, insulation property degradation, and damage to insulation films, etc.

Pending Publication Date: 2022-04-05
SAMSUNG ELECTRONICS CO LTD
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the insulating film surrounding the TSV is also thinned, which may damage the insulating film and / or cause deterioration of the insulating film, resulting in deterioration of insulating properties between the semiconductor substrate and the TSV

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Figure 1A is a cross-sectional view of a semiconductor device according to some example embodiments of inventive concepts. Figure 1B yes Figure 1A Enlarged view of region P1 in . figure 2 is along Figure 1A A cross-sectional view taken along line II' in .

[0023] refer to Figure 1A , Figure 1B and figure 2 , the semiconductor device 100A may include a substrate 10, a front-end-of-line (FEOL) structure 11, a lower insulating layer 60, a through-silicon via (TSV) structure 30, a via insulating layer 21, a cap insulating layer 25, an air gap AG, and a wiring layer 40. , connecting the terminal 50 and the conductive layer 70 .

[0024] Substrate 10 may be or include a semiconductor substrate such as, but not limited to, a silicon substrate, a silicon germanium wafer, a III-V substrate, a silicon-on-insulator substrate, or the like. The substrate 10 may be or correspond to a wafer, and may be undoped or lightly doped, for example may be lightly doped with P-type...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes: a substrate; an interlayer insulating layer covering an upper surface of the substrate; a separate device in the interlayer insulating layer; a lower insulating layer covering a lower surface of the substrate; a through silicon via (TSV) structure extending through the substrate, the interlayer insulating layer, and the lower insulating layer; a conductive pad connected to an upper end of the TSV structure; a via insulating layer surrounding the TSV structure; and a cap insulating layer surrounding the TSV structure inside the via insulating layer. The via insulating layer and the cap insulating layer have an air gap therebetween. A portion of the air gap extends into the lower insulating layer.

Description

technical field [0001] Some example embodiments of inventive concepts relate to semiconductor devices including through silicon vias (TSVs) and / or methods of producing / manufacturing the same. Background technique [0002] Alternative Bonding Wire Technology / Instead of Bonding Wire Technology / In addition to the bonding wire technology, a TSV technology in which a through-silicon via (TSV) extends through the entire semiconductor substrate is used as a recent semiconductor technology. Compared with existing bonding wire technology, such TSV technology greatly reduces the physical distance and thus greatly contributes to increasing the communication speed between semiconductor chips. [0003] Such TSVs must be gradually reduced according to scaling down and / or integration enhancement of semiconductor devices. As a result, the insulating film surrounding the TSV is also thinned, which may damage the insulating film and / or cause deterioration of the insulating film, resulting in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/498H01L21/48
CPCH01L21/76898H01L23/3192H01L23/481H01L23/3114H01L24/05H01L21/7682H01L2224/16145H01L2224/13H01L23/49827H01L23/485H01L23/13H01L23/528H01L23/3171H01L21/76831
Inventor 韩正勋李周益
Owner SAMSUNG ELECTRONICS CO LTD