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Stepped electrode structure based on two-dimensional material transistor and preparation method thereof
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A technology of two-dimensional materials and electrode structures, which is applied in transistors, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as good side contact of two-dimensional materials and device performance degradation, and achieve improved charge transfer characteristics and good contact characteristics, effects of high mobility
Pending Publication Date: 2022-04-05
HEFEI UNIV OF TECH
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Problems solved by technology
However, due to technical reasons, it is difficult to ensure good contact between the metal electrode and the side of each layer of two-dimensional material in the channel, resulting in a decrease in device performance.
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preparation example Construction
[0039] A method for preparing a stepped electrode structure based on a two-dimensional material transistor, specifically comprising the following steps:
[0040] Step 1, cleaning the conductive substrate 1, and setting an insulating layer 2 on the conductive substrate 1;
[0041] Step 2, setting a two-dimensional material 4 on the insulating layer 2 of the conductive substrate 1;
[0042] Step 3, spin coating the photoresist on the insulating layer 2 and the two-dimensional material 4;
[0043] Step 4, patterning and photoetching the photoresist 5;
[0044] Step five, etching the two-dimensional material 4 in the channel;
[0045] Step 6, putting the etched sample into an organic solution to remove the photoresist 5;
[0046] Step seven, repeat steps three to six according to the total number of layers of the two-dimensional material 4, so that the electrodes are in contact with the upper surface of each layer of the two-dimensional material 4, and the contact surfaces of t...
Embodiment
[0061] MoS 2 Preparation of transistor step electrodes:
[0062] 1. Select a P++ type Si substrate with a thickness of 500um, and grow 285nm SiO on the surface by thermal oxidation 2 , as an insulating layer.
[0063] 2. Transfer 3 layers of MoS by tape peeling 2 to the insulating layer of the substrate.
[0064] 3. Using PMMA A7 / MMA EL6 double-layer photoresist method, spin coating onto MoS 2 and on the substrate.
[0065] 4. Use electron beam lithography (EBL) to pattern the photoresist, and expose the MoS that needs to be etched 2 s position.
[0066] 5. Etching MoS with a single layer thickness by Ar ions in a reactive ion etcher (RIE) 2 . In this example of etching equipment, set the gas to Ar, RF power to 50W; pressure to 50mTorr; time to 50s.
[0067] 6. After the etching is finished, put the sample into acetone to remove the attached photoresist.
[0068] 7. Repeat the process steps 1~6 of the first layer etching, and modify the exposure pattern position of E...
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Abstract
The invention discloses a stepped electrodestructure based on a two-dimensional material transistor and a preparation method of the stepped electrode structure, and belongs to the technical field of semiconductors, and the two-dimensional material transistor refers to a transistor of which a channel adopts a two-dimensional semiconductor material. The step electrode structure refers to that the contact surface between the transistor electrode and each layer of the channel two-dimensional material is in a step shape along with the fluctuation of different layer thicknesses. The preparation method comprises the steps of photoresistspin coating, graphical exposure, etching, metalcoating and coating stripping. According to the stepped electrode structure based on the two-dimensional material transistor, the problem of contact between the two-dimensional material and the metal electrode is solved, the contact resistance is reduced, and the charge mobility is improved. The invention provides a basis for wide application of the two-dimensional material in the transistor.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a stepped electrode structure based on a two-dimensional material transistor and a preparation method thereof. Background technique [0002] Since the discovery of the two-dimensional material graphene in 2004, two-dimensional semiconductor materials have become the most ideal for the next generation of thermal, optical, communication and micro-nano devices due to their high mobility, bipolarity, adjustable energy band, and flexibility. one of the materials. However, due to the layer characteristics of two-dimensional materials, the performance of conventional two-dimensional material transistors cannot give full play to the inherent characteristics of two-dimensional materials, which affects the practical application of two-dimensional material transistors. [0003] The current conventional two-dimensional material transistor electrode structure is top electrode, side el...
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