Method for monitoring trace impurities on line for electronic-grade polycrystalline silicon production system
A production system, polysilicon technology, applied in measurement devices, instruments, scientific instruments, etc., can solve the problems that need to be improved, the detection accuracy of impurity content is low, and it cannot be monitored at all times.
Pending Publication Date: 2022-04-08
江苏鑫华半导体科技股份有限公司
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Problems solved by technology
[0002] The impurity content level and stability requirements of TCS (trichlorosilane) used in the production process of electronic grade polysilicon are extremely strict. In order to ensure its quality meets the requirements, it is necessary to regularly monitor its impurity content. The current online monitoring method still has problems such as incapable of full-time monitoring, low detection accuracy of impurity content, and poor detection result accuracy.
[0003] Thus, current methods for on-line monitoring of trace impurities in electronic-grade polysilicon production systems still need to be improved
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[0024] Embodiments of the present invention are described in detail below. The embodiments described below are exemplary only for explaining the present invention and should not be construed as limiting the present invention. If no specific technique or condition is indicated in the examples, it shall be carried out according to the technique or condition described in the literature in this field or according to the product specification. The reagents or instruments used were not indicated by the manufacturer, and they were all commercially available conventional products.
[0025] In one aspect of the present invention, the present invention proposes a method for on-line monitoring of trace impurities in an electronic-grade polysilicon production system. According to an embodiment of the present invention, refer to figure 1 , the method includes:
[0026] S100: At least two first microreactors 100 are arranged on the inlet side of the reduction furnace (for example, refer t...
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The invention discloses a trace impurity online monitoring method for an electronic grade polycrystalline silicon production system. The method comprises the steps that a first microreactor is arranged on the inlet side of a reduction furnace, the raw material end of the first microreactor and the raw material end of the reduction furnace are independently connected with a first trichlorosilane pipeline and a hydrogen pipeline respectively, the structure of the first microreactor is the same as that of the reduction furnace, and a deposition carrier is arranged in the first microreactor; depositing trichlorosilane to form a first silicon rod by using a first microreactor; and melting the first silicon rod area into first monocrystalline silicon, testing the impurity content of the first monocrystalline silicon, judging the purity of trichlorosilane and / or hydrogen supplied into the reduction furnace, and predicting the purity of the finally prepared electronic-grade polycrystalline silicon. The method is simple and efficient, the reliability and the accuracy of the online monitoring test result can be improved, and the test result can be used as a reference basis for adjusting technological parameters for purifying trichlorosilane and can also be used for predicting the purity of electronic-grade polycrystalline silicon.
Description
technical field [0001] The invention relates to the technical field of electronic-grade polysilicon production, in particular to a method for on-line monitoring of trace impurities used in an electronic-grade polysilicon production system. Background technique [0002] The impurity content level and stability requirements of TCS (trichlorosilane) used in the production process of electronic grade polysilicon are extremely strict. In order to ensure its quality meets the requirements, it is necessary to regularly monitor its impurity content. The current online monitoring method still has problems such as incapable of full-time monitoring, low detection accuracy of impurity content, and poor detection result accuracy. [0003] Therefore, the current methods for on-line monitoring of trace impurities in electronic grade polysilicon production systems still need to be improved. Contents of the invention [0004] The present invention aims to solve one of the technical proble...
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IPC IPC(8): G01N33/00
Inventor 高召帅
Owner 江苏鑫华半导体科技股份有限公司