Semiconductor device
A semiconductor and conductor technology, applied in the field of semiconductor devices, can solve problems such as difficulty in meeting the high output requirements of high frequency amplifier circuits
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no. 1 example
[0040] refer to Figure 1 to Figure 8 The accompanying drawings describe the semiconductor device of the first embodiment.
[0041] figure 1 It is a schematic plan view of the high-frequency module 20 mounted with the semiconductor device 22 of the first embodiment. A semiconductor device 22 , a low-noise amplifier 109 , an antenna switch (fourth switch) 107 , and a plurality of other surface mount components 23 are mounted on the module substrate 21 . The low-noise amplifier 109 and the antenna switch 107 are composed of a single semiconductor-based, eg, silicon-based or germanium-based integrated circuit element. The surface mount components 23 are, for example, passive components such as inductors, capacitors, and resistance elements. The semiconductor device 22 includes a first member 30 and a second member 40 bonded to the lower surface (the side facing the module substrate 21 ) of the first member 30 . The second member 40 is smaller than the first member 30 in plan ...
no. 2 example
[0110] Next, refer to Figure 11 The semiconductor device of the second embodiment will be described. Below, for and reference Figure 1 to Figure 8 The description of the same configuration as the semiconductor device of the first embodiment described in the accompanying drawings is omitted.
[0111] Figure 11 indicates that the semiconductor device 22 of the second embodiment is mounted ( Figure 4 ) is a block diagram of the circuit configuration of the high frequency module 20. In the first embodiment, two frequency band selection switches 108 for reception and two low-noise amplifiers 109 ( Figure 5 ). In contrast, in the second embodiment, one band selection switch 108 for reception and one low noise amplifier 109 are mounted.
[0112] The band selection switch 108 has eight contacts on the input side. Six of the eight contacts are connected to the output ports for reception of the six duplexers 106 , respectively. The remaining two contacts are respectively co...
no. 3 example
[0117] Next, refer to Figure 12 The semiconductor device of the third embodiment will be described. Below, for and reference Figure 1 to Figure 8 The description of the same configuration as the semiconductor device of the first embodiment described in the accompanying drawings is omitted.
[0118] Figure 12It is a block diagram showing the circuit configuration of the high-frequency module 20 on which the semiconductor device of the third embodiment is mounted. In the first embodiment, the second electronic circuit 49 of the second component 40 ( Figure 4 ) includes a power amplifier 104 ( Figure 5 ). In contrast, in the third embodiment, the second electronic circuit 49 ( Figure 9 ) includes two systems of power amplifiers 104. Each power amplifier 104 includes a preamplifier circuit 102 and a postamplifier circuit 103 respectively.
[0119] In addition, although in the first embodiment, the input switch 101 ( Figure 5 ) included in the first electronic circu...
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