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Surface acoustic wave resonance device, forming method, filtering device and radio frequency front-end device

A resonant device, surface acoustic wave technology, applied in the direction of impedance network, electrical components, etc., can solve the problem that the Q value of the resonator needs to be improved

Active Publication Date: 2022-04-12
CHANGZHOU CHEMSEMI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the Q value of existing resonators still needs to be improved

Method used

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  • Surface acoustic wave resonance device, forming method, filtering device and radio frequency front-end device
  • Surface acoustic wave resonance device, forming method, filtering device and radio frequency front-end device
  • Surface acoustic wave resonance device, forming method, filtering device and radio frequency front-end device

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Experimental program
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Embodiment Construction

[0035] As mentioned in the background, the Q value of existing resonators still needs to be improved. A detailed description will be given below in conjunction with the accompanying drawings.

[0036] figure 1 is a schematic diagram of the top view structure of a SAW resonator, figure 2 yes figure 1 The schematic diagram of the cross-sectional structure along the direction A1-A2 and the corresponding sound velocity distribution.

[0037] Please refer to figure 1 and figure 2 , the SAW resonator includes: a piezoelectric substrate 110, and the piezoelectric substrate 110 includes a first bus area VI, a first false finger area I, a first spacer area II, an interdigital area arranged in sequence along a first direction X The overlapping region III, the second spacer region IV, the second dummy region V and the second bus region VII; the electrode layer located on the surface of the piezoelectric substrate 110, the electrode layer includes: a first bus (Busbar) 121, and A ...

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PUM

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Abstract

The invention discloses a surface acoustic wave resonance device, a forming method, a filtering device and a radio frequency front-end device, and relates to the technical field of semiconductors, and the surface acoustic wave resonance device comprises a piezoelectric substrate which comprises a first bus region, a first spacer region, an interdigital overlapping region, a second spacer region and a second bus region which are sequentially arranged along a first direction; the metal diffusion part is positioned in the interdigital overlapping area; the electrode layer is located on the surface of the piezoelectric substrate and comprises a first bus located on the first bus area, a second bus located on the second bus area, a plurality of first electrode strips connected with the first bus and a plurality of second electrode strips connected with the second bus, and the first electrode strips and the second electrode strips are alternately arranged in the second direction; the second direction is perpendicular to the first direction, the first electrode strips are located on the surfaces of the first spacer region and the interdigital overlapping region, and the second electrode strips are located on the surfaces of the second spacer region and the interdigital overlapping region. Therefore, transverse sound wave leakage can be reduced, and the parallel Q value is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a surface acoustic wave resonance device and a forming method, a filter device and a radio frequency front-end device. Background technique [0002] The radio frequency (Radio Frequency, RF) front-end chip of wireless communication equipment includes: power amplifier (Power Amplifier, PA), antenna switch, RF filter, multiplexer (multiplexer) including duplexer (duplexer) and low noise amplifier (Low Noise Amplifier, LNA) and so on. Among them, RF filters include piezoelectric surface acoustic wave (Surface Acoustic Wave, SAW) filter, piezoelectric bulk acoustic wave (Bulk Acoustic Wave, BAW) filter, micro electromechanical system (Micro Electro Mechanical System, MEMS) filter, integrated Passive device (Integrated Passive Devices, IPD) filter, etc. [0003] The Q value of the SAW resonator is relatively high. Therefore, the RF filter based on the SAW resonator (that is, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/25H03H9/145H03H9/02H03H3/08
Inventor 邹雅丽王斌韩兴周建
Owner CHANGZHOU CHEMSEMI CO LTD