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Surface acoustic wave resonance device and forming method, filter device and radio frequency front-end device

A resonant device, surface acoustic wave technology, applied in the direction of impedance network, electrical components, etc., can solve the problem that the Q value of the resonator needs to be improved

Active Publication Date: 2022-08-02
CHANGZHOU CHEMSEMI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the Q value of existing resonators still needs to be improved

Method used

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  • Surface acoustic wave resonance device and forming method, filter device and radio frequency front-end device
  • Surface acoustic wave resonance device and forming method, filter device and radio frequency front-end device
  • Surface acoustic wave resonance device and forming method, filter device and radio frequency front-end device

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Embodiment Construction

[0029] As mentioned in the background art, the Q value of the existing resonator still needs to be improved. The following detailed description is given in conjunction with the accompanying drawings.

[0030] figure 1 is a schematic top-view structure of a SAW resonator, figure 2 Yes figure 1 The schematic diagram of the cross-sectional structure along the direction A1-A2 and the corresponding schematic diagram of the sound velocity distribution.

[0031] Please refer to figure 1 and figure 2 , the SAW resonator includes: a piezoelectric substrate 110, the piezoelectric substrate 110 includes a bus area VI, a dummy finger area I, a spacer area II, an interdigital coincidence area III, and a spacer area arranged in sequence along the first direction X IV, a dummy area V and a bus area VII; an electrode layer located on the surface of the piezoelectric substrate 110 , the electrode layer includes: a bus bar 121 , a plurality of electrode bars 122 connected to the bus bar ...

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Abstract

A surface acoustic wave resonance device and its forming method, a filtering device and a radio frequency front-end device relate to the technical field of semiconductors, wherein the surface acoustic wave resonance device comprises: a piezoelectric substrate, and the piezoelectric substrate includes first a bus area, a first spacer area, an interdigitated area, a second spacer area and a second bus area; a particle injection part located in the first bus area, the first spacer area, the second spacer area and the second bus area; located in the first bus area, the first spacer area, the second spacer area and the second bus area The electrode layer on the surface of the piezoelectric substrate includes: a first bus line, a second bus line, a number of first electrode strips connected to the first bus line, and a number of second electrode strips connected to the second bus line, the first electrode strip and the second The electrode strips are alternately arranged in the second direction, the first electrode strips are located on the surfaces of the first spacer region and the interdigital coincidence region, and the second electrode strips are located on the surfaces of the second spacer region and the interdigital coincidence region. Therefore, transverse acoustic wave leakage can be reduced, and the parallel Q value of the surface acoustic wave resonator device can be improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a surface acoustic wave resonance device and its formation method, a filtering device and a radio frequency front-end device. Background technique [0002] The radio frequency (RF) front-end chip of wireless communication equipment includes: power amplifier (PA), antenna switch, RF filter, multiplexer including duplexer (multiplexer) and low noise amplifier (Low Noise Amplifier, LNA) etc. Among them, the RF filter includes piezoelectric surface acoustic wave (Surface Acoustic Wave, SAW) filter, piezoelectric bulk acoustic wave (Bulk Acoustic Wave, BAW) filter, Micro Electro Mechanical System (Micro Electro Mechanical System, MEMS) filter, integrated Passive device (IntegratedPassive Devices, IPD) filter and so on. [0003] The Q value of the SAW resonator is high. Therefore, the RF filter (ie SAW filter) made based on the SAW resonator has low insertion loss...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/25H03H9/02H03H9/145
Inventor 邹雅丽王斌韩兴周建
Owner CHANGZHOU CHEMSEMI CO LTD