Unlock instant, AI-driven research and patent intelligence for your innovation.

Graphene terahertz wave detector

A graphene and terahertz technology, applied in the field of terahertz wave applications, can solve the problems of high noise and low sensitivity, and achieve the effects of high detection sensitivity, high sensitivity and increased complexity

Inactive Publication Date: 2022-04-15
于孟今
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this type of terahertz wave detector is based on the change of the conductive properties of key materials such as graphene, which has low sensitivity and large noise.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene terahertz wave detector
  • Graphene terahertz wave detector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The invention provides a graphene terahertz wave detector, such as figure 1 As shown, it includes an antiferromagnetic layer 1 , a pinning layer 2 , a graphene layer 3 , and a free layer 4 . The material of the antiferromagnetic layer 1 is a hard magnetic antiferromagnetic material, specifically, the material of the antiferromagnetic layer 1 is IrMn, PtMn, FeMn. The pinning layer 2 is placed on the antiferromagnetic layer 1 . The material of the pinning layer 2 is a metal or semi-metal with high spin polarizability, specifically, the material of the pinning layer 2 is Co, Fe, CoFe, CoFeB, CoFeAl alloy. The thickness of the pinning layer 2 is not limited here. Graphene layer 3 is placed on pinned layer 2 . The number of layers of graphene in the graphene layer 3 is less than 10 layers, so that when the graphene layer 3 absorbs terahertz waves to generate heat, the conductive properties or quantum tunneling properties of the graphene layer 3 can be changed more, thereb...

Embodiment 2

[0025] On the basis of Example 1, such as figure 2 As shown, a graphene sheet 5 is also included, and the graphene sheet 5 is placed in the free layer 4 . The graphene sheet 5 is parallel to the graphene layer 3 . The graphene sheet 5 is square or rectangular in shape. The size of the graphene sheet 5 is not limited here. The size of the graphene sheet 5 depends on the wavelength band of the terahertz wave to be measured. The graphene sheet 5 is periodically arranged in the plane where the graphene sheet 5 is located, that is to say, in figure 2 , the graphene sheets 5 are arranged periodically in the horizontal plane, and the period may be a square period or a rectangular period. In this way, the terahertz wave is confined between the graphene sheet 5 and the graphene layer 3, and a strong electric field is formed between the graphene sheet 5 and the graphene layer 3, that is, the terahertz wave is localized or confined in the graphite between the graphene sheet 5 and ...

Embodiment 3

[0028] On the basis of embodiment 2, a second graphene layer is also included, and the second graphene layer covers the free layer 4 . The number of graphene layers in the second graphene layer is less than 5 layers, so that the terahertz wave can penetrate the second graphene layer. Since the second graphene layer can also play a role in confining the terahertz wave, that is to say, an effect similar to a Fabry-Perot interference cavity is formed between the second graphene layer and the graphene layer 3 . In this way, the terahertz wave in the free layer 4 is stronger, so that the graphene layer 3 absorbs more terahertz waves, thereby generating more heat, thereby changing the quantum tunneling of the graphene layer 3 more characteristics, thereby changing the resistance between the pinned layer 2 and the free layer 4 more, thereby achieving higher sensitivity for terahertz wave detection. In this embodiment, on the one hand, a Fabry-Perot interference cavity is formed betw...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of terahertz wave detection, and particularly provides a graphene terahertz wave detector, which is characterized in that an antiferromagnetic layer is made of a hard magnetic antiferromagnetic material, a pinning layer is arranged on the antiferromagnetic layer, the pinning layer is made of metal or semimetal with high spin polarizability, a graphene layer is arranged on the pinning layer, a free layer is arranged on the graphene layer, and the free layer is made of metal or semimetal with high spin polarizability. The material of the free layer is a soft magnetic material with weak magnetic anisotropy. During application, a fixed magnetic field is applied to act on the device to generate a giant magnetoresistance effect; meanwhile, terahertz waves to be measured are applied to irradiate the graphene layer. The intensity or wavelength of the terahertz wave to be measured is determined by measuring the resistance difference between the pinning layer and the free layer when the terahertz wave is irradiated and when the terahertz wave is not irradiated. The terahertz wave detector has the advantage of high terahertz wave detection sensitivity.

Description

technical field [0001] The invention relates to the application field of terahertz waves, in particular to a graphene terahertz wave detector. Background technique [0002] The frequency band of terahertz wave is between infrared and microwave, the frequency is in the range of 0.1-10THz, the wavelength is in the range of 3 mm-20 microns, and it is between millimeter wave and infrared wave. Compared with electromagnetic waves in other frequency bands, terahertz waves have many unique characteristics, and terahertz technology has great application prospects in military and civilian applications. Terahertz waves match the low-frequency vibration or rotational energy range of molecules or materials. The characteristics of terahertz waves in propagation, reflection, scattering, transmission, and absorption are different from those of millimeter waves and infrared rays. They have great applications in material characterization and manipulation. space. [0003] Terahertz wave det...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/06H10N50/10H10N52/00
CPCH10N52/00H10N50/85H10N50/10
Inventor 于孟今
Owner 于孟今