Silicon carbide coating graphite base and preparation method thereof

Abstract

The invention relates to a silicon carbide coating graphite base which comprises a disc-shaped graphite base body, a silicon carbide film is deposited on the surface of the graphite base body, and a graphene film or a refractory metal carbide layer is deposited outside the silicon carbide film. Or a refractory metal carbide layer is deposited on the surface of the graphite base; the silicon carbide coating is deposited on the surface of the refractory metal carbide layer or the surface of the graphene film; a graphene film or a refractory metal carbide layer is deposited on the surface of a graphite base, so that the specific surface area of the surface of a matrix is greatly increased, more nucleation sites are formed on the surface of the matrix, and when a silicon carbide coating is deposited, the aggregation degree of silicon carbide crystal grains is reduced, so that the crystal grains of the silicon carbide coating are distributed more uniformly and compactly; the thermal shock resistance and the corrosion resistance of the silicon carbide coating graphite base are improved; the invention further relates to a preparation method of the silicon carbide coating graphite base.

Description

technical field [0001] The invention belongs to the technical field of semiconductor epitaxial growth equipment, and in particular relates to a silicon carbide coated graphite base and a preparation method thereof. Background technique [0002] MOCVD equipment is the most important equipment in the production process of the LED industry. Due to its high technical content, its value accounts for 70% of the entire industrial chain (epitaxial wafer-chip-package-application). The CVD-SiC coated graphite base is the carrier and heating body of the substrate material, and is the most critical component of the MOCVD equipment, which directly determines the uniformity and purity of the thin film material. The bonding force between the silicon carbide coating and the substrate, surface roughness, compactness, purity and other indicators directly affect the quality of the epitaxial wafer and the life of the graphite base. [0003] The preparation method of silicon carbide coated grap...

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Problems solved by technology

[0005] In view of this, the purpose of the present invention is to provide a silicon carbide coated graphite base, to solve the uneven particle size of the silicon carbide coating in the prior art, poor thermal shock resistance and corrosion resistance in the MOCVD environment ; In addition, the application also provides a method for making a silicon carbide coated graphite base

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