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BARC resin for narrow-distribution 193nm deep ultraviolet photoresist and preparation method of BARC resin

A technology of deep ultraviolet light and narrow distribution, applied in the field of polymers, can solve the problem of molecular weight not having a narrow distribution, achieve stable light absorption performance, consistent external stress response, and reduce light reflection

Pending Publication Date: 2022-04-26
NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides a narrow distribution BARC resin for 193nm deep ultraviolet photoresist and its preparation method, aiming to solve the technical problem that the molecular weight of BARC resin for 193nm deep ultraviolet photoresist does not have a narrow distribution in the prior art

Method used

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  • BARC resin for narrow-distribution 193nm deep ultraviolet photoresist and preparation method of BARC resin
  • BARC resin for narrow-distribution 193nm deep ultraviolet photoresist and preparation method of BARC resin

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Embodiment 1

[0026] A kind of preparation method of BARC resin for 193nm deep ultraviolet photoresist of narrow distribution, comprises the following steps:

[0027] Mass ratio: the ratio of p-hydroxystyrene, styrene, hydroxypropyl methacrylate, and tetrahydrofuran solvent is 1:1:1:12, and the ratio of carboxylated fullerene to initiator is 13:0.06.

[0028] S1. Put p-hydroxystyrene, styrene and hydroxypropyl methacrylate in a four-necked flask containing tetrahydrofuran solvent, and stir until the monomers are evenly mixed;

[0029] S2. After the monomer is dissolved, add the carboxylated fullerene and the initiator azobisisobutyronitrile, and stir until dissolved;

[0030] S3. Place the four-neck flask with the reaction solution in an oil bath equipped with a magnetic stirrer. After installing the condenser tube and the nitrogen port, turn on the condensed water, feed in nitrogen, turn on the stirring and raise the temperature to The boiling point of the solvent is 65°C. After the boili...

Embodiment 2

[0034] A kind of preparation method of BARC resin for 193nm deep ultraviolet photoresist of narrow distribution, comprises the following steps:

[0035] Mass ratio: the ratio of p-hydroxystyrene, styrene, hydroxypropyl methacrylate, tetrahydrofuran solvent is 2:1-10:2:20, and the ratio of carboxylated fullerene to initiator is 20:0.1 .

[0036] S1. Put p-hydroxystyrene, styrene and hydroxypropyl methacrylate in a four-necked flask containing tetrahydrofuran solvent, and stir until the monomers are evenly mixed;

[0037] S2. After the monomer is dissolved, add the carboxylated fullerene and the initiator azobisisovaleronitrile, and stir until dissolved;

[0038] S3. Place the four-neck flask with the reaction solution in an oil bath equipped with a magnetic stirrer. After installing the condenser tube and the nitrogen port, turn on the condensed water, feed in nitrogen, turn on the stirring and raise the temperature to The boiling point temperature of the solvent is 65.2°C. A...

Embodiment 3

[0042] A kind of preparation method of BARC resin for 193nm deep ultraviolet photoresist of narrow distribution, comprises the following steps:

[0043] Mass ratio: the ratio of p-hydroxystyrene, styrene, hydroxypropyl methacrylate, tetrahydrofuran solvent is 3:3:4:30, and the ratio of carboxylated fullerene to initiator is 30:0.2.

[0044] S1. Put p-hydroxystyrene, styrene and hydroxypropyl methacrylate in a four-necked flask containing tetrahydrofuran solvent, and stir until the monomers are evenly mixed;

[0045] S2. After the monomer is dissolved, add the carboxylated fullerene of the hollow spherical network substance and the initiator azobisisoheptanonitrile, and stir until dissolved;

[0046] S3. Place the four-neck flask with the reaction solution in an oil bath equipped with a magnetic stirrer. After installing the condenser tube and the nitrogen port, turn on the condensed water, feed in nitrogen, turn on the stirring and raise the temperature to The boiling point t...

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Abstract

The invention is applicable to the technical field of macromolecules, and provides a preparation method of narrow-distribution BARC resin for 193nm deep ultraviolet photoresist, which comprises the following steps: dissolving a BARC resin monomer, carboxylated fullerene and an initiator in a solvent to obtain a monomer solution, heating at high temperature, carrying out free radical polymerization reaction to obtain a reaction solution, and cooling to obtain the BARC resin for the 193nm deep ultraviolet photoresist. And carrying out precipitation treatment on the cooled reaction liquid by using mixed solvents with different polarities, separating and drying to obtain the BARC resin for the photoresist. Carboxyl of carboxylated fullerene can react with hydroxyl of hydroxypropyl methacrylate and hydroxyl of p-hydroxystyrene, some chain transfer development can be reduced, a narrow-distribution polymer can be obtained, a hollow sphere net structure of fullerene can reduce light reflection, the light absorption performance of BARC resin is more stable, mixed solvents with different polarities are used for treating precipitates, and the BARC resin has the advantages that the light absorption performance is improved, and the service life of the BARC resin is prolonged. The molecular weight and molecular weight distribution of the BARC resin can be changed, and the change and floating of polarity can be adjusted according to requirements, so that the narrow-distribution BARC resin for the 193nm deep ultraviolet photoresist is prepared.

Description

technical field [0001] The invention belongs to the technical field of macromolecules, and in particular relates to a narrowly distributed 193nm deep ultraviolet photoresist BARC resin and a preparation method thereof. Background technique [0002] In integrated circuit micrographic processing, as the size becomes smaller and smaller, it is necessary to further improve the resolution of the photoresist. However, with the continuous reduction of the exposure wavelength of photoresist technology, the thinner the film, the higher the resolution, but the standing wave effect will make the key dimensions uncontrollable and increase the etching precision. In this regard, the concept of BARC was introduced, that is, the bottom anti-reflective coating, which is also a polymer, is coated with a layer of BARC before applying photoresist, which is used to absorb incident light and change the route of incident light, namely k, n, to eliminate the standing wave effect. [0003] As a po...

Claims

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Application Information

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IPC IPC(8): C08F212/14C08F212/08C08F220/20G03F7/004
CPCC08F212/24C08F212/08C08F220/20G03F7/004
Inventor 陈鹏卢汉林马潇顾大公毛智彪许从应
Owner NINGBO NATA OPTO ELECTRONICS MATERIAL CO LTD
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