Semiconductor devices fabricated using plasma assisted atomic layer deposition techniques and methods thereof

Abstract

The invention relates to a semiconductor device manufactured using plasma assisted atomic layer deposition technology and a method thereof. A method of fabricating a semiconductor device using a plasma assisted atomic layer deposition technique includes providing a substrate including a silicon substrate and a first oxide layer. Depositing a plurality of stacked layers on the substrate, wherein the stacked layers comprise dielectric layers and conductor layers; the stack layer is etched to form at least one trench. A second oxide layer is deposited on the stack layer and the trench using a plasma assisted atomic layer deposition device. The plasma-assisted atomic layer deposition device comprises a chamber, an upper electrode and a lower electrode, wherein the upper electrode is positioned above the chamber and comprises a plurality of spray heads; the first radio frequency power device enables the plurality of nozzles of the upper electrode to generate plasma, the second radio frequency power device cleans the plurality of nozzles, and the lower electrode is arranged below the cavity and connected with a third radio frequency power device. Depositing a high-resistance layer on the second oxide layer, and depositing a low-resistance layer on the high-resistance layer;

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a semiconductor device using plasma-assisted atomic layer deposition technology. Background technique [0002] The semiconductor industry is constantly booming. Technological advances in semiconductor design and materials have enabled semiconductor devices with smaller and more complex circuits. The functional density of semiconductor devices is generally increased while the size is reduced, which can improve production efficiency and reduce costs. [0003] The function of a semiconductor device is limited by the area of ​​the semiconductor chip. With the development of semiconductor technology, more and more devices use three-dimensional stacking technology to increase the density of components. However, the three-dimensional stacking technology increases the complexity of the semiconductor device manufacturing process,...

AI Technical Summary

Problems solved by technology

There are still many problems in the existing three-dimensional semiconductor manufacturing process, which affect the electrical and mechanical properties of the semiconductor wafer

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