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Method for preparing thin-film solar cell absorption layer with stannite structure based on sulfur-source-free precursor

A technology of solar cells and kesterite, applied in the field of solar cells, can solve problems such as serious environmental hazards, and achieve the effects of easy operation, good application value, and reduced emissions

Pending Publication Date: 2022-05-06
JIANGXI UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the precursor film of the CZTSSe absorbing layer is prepared by the solution method, sulfur element is often introduced, and sulfur-containing gas will be generated during the annealing process, which is relatively harmful to the environment.

Method used

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  • Method for preparing thin-film solar cell absorption layer with stannite structure based on sulfur-source-free precursor
  • Method for preparing thin-film solar cell absorption layer with stannite structure based on sulfur-source-free precursor
  • Method for preparing thin-film solar cell absorption layer with stannite structure based on sulfur-source-free precursor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] This embodiment provides a method for preparing the absorber layer of a CZTSe thin film solar cell based on a sulfur-free source precursor, as follows:

[0051] (1) Weigh 0.93436g Cu(CH 3 COO) 2 ·H 2 O, 0.92194g Zn(CH 3 COO) 2 2H 2 O and 0.67695 g SnCl 2 2H 2 O and be dissolved in 10mL solvent (ethanolamine:DMF=7:3 volume ratio), dissolve completely and form CZT precursor solution;

[0052] (2) Spin-coat the CZT precursor solution onto the cleaned molybdenum-coated (800nm) soda-lime glass substrate using a homogenizer, and then place it on a heating platform (400°C) for 2 minutes to anneal, and repeat the spin-coating for 7 times to obtain CZT Precursor film;

[0053] (3) Under the condition of continuous feeding of protective gas, the obtained CZT precursor film was placed in a rapid heating annealing furnace for selenization treatment, the temperature was raised to 530 °C for 500 s, and the temperature was naturally lowered after holding for 600 s to obtain a ...

Embodiment 2

[0060] This embodiment provides a method for preparing the absorber layer of a CZTSe thin film solar cell based on a sulfur-free source precursor, as follows:

[0061] (1) Weigh 0.93436g Cu(CH 3 COO) 2 ·H 2 O, 0.92194g Zn(CH 3 COO) 2 2H 2 O and 0.67695 g SnCl 2 2H 2 O and be dissolved in 10mL solvent (ethanolamine:DMF=7:3 volume ratio), dissolve completely and form CZT precursor solution;

[0062] (2) Spin-coat the CZT precursor solution onto the cleaned molybdenum-coated soda-lime glass substrate by using a homogenizer, then place it on a heating platform (400°C) for 4 minutes and anneal for 4 minutes, and obtain the CZT precursor film after repeated spin-coating 7 times;

[0063] (3) Under the condition of continuous feeding of protective gas, the obtained CZT precursor film was placed in a rapid heating annealing furnace for selenization treatment, the temperature was raised to 530 °C for 500 s, and the temperature was naturally lowered after holding for 600 s to obt...

Embodiment 3

[0072] This embodiment provides a method for preparing the absorber layer of a CZTSe thin film solar cell based on a sulfur-free source precursor, as follows:

[0073] (1) Weigh 0.93436g Cu(CH 3 COO) 2 ·H 2 O, 0.92194g Zn(CH 3 COO) 2 2H 2 O and 0.67695 g SnCl 2 2H 2 O and be dissolved in 10mL solvent (ethanolamine:DMF=7:3 volume ratio), dissolve completely and form CZT precursor solution;

[0074] (2) Spin-coat the CZT precursor solution onto the cleaned molybdenum-coated soda-lime glass substrate by using a homogenizer, then place it on a heating table (400°C) for annealing for 6 minutes, and obtain the CZT precursor film after repeated spin-coating 7 times;

[0075] (3) Under the condition of continuous feeding of protective gas, the obtained CZT precursor film was placed in a rapid heating annealing furnace for selenization treatment, the temperature was raised to 530 °C for 500 s, and the temperature was naturally lowered after holding for 600 s to obtain a CZTSe ab...

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Abstract

The invention provides a method for preparing a thin-film solar cell absorption layer with a stannite structure based on a sulfur-source-free precursor, which comprises the following steps of: preparing a sulfur-source-free CZT precursor solution containing Cu, Zn and Sn elements by using a mixed solution of ethanolamine and DMF (Dimethyl Formamide) according to a volume ratio of 6: 4-10: 0 as a solvent, preparing a sulfur-source-free CZT precursor film through a solution spin-coating method, and preparing the absorption layer of the thin-film solar cell with the stannite structure based on the sulfur-source-free CZT precursor film. And carrying out selenylation and / or vulcanization on the sulfur-source-free CZT precursor film. The sulfur-source-free CZT precursor film is synthesized by adopting a new solution method, and then selenylation or vulcanization or selenylation and vulcanization are carried out at the same time, so that the absorption layer film with the stannite structure can be prepared, and the absorption layer film can be used for preparing a film solar cell. According to the method, a sulfur source is not contained in the process of preparing the precursor, sulfur-containing gas is not released, emission of toxic gas is reduced, and the method is easy and convenient to operate and has good application value in the field of solar cells.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing an absorbing layer of a kesterite-structured thin-film solar cell based on a sulfur-free source precursor. Background technique [0002] With the continuous development of human society, human demand for energy is also increasing. Not only is the amount of non-renewable energy limited, but also the waste water, gas and solid waste discharged during the use process also cause huge pollution to the environment. Because of its advantages of being green, pollution-free, and free from geographical restrictions, solar energy has become a major research hotspot and has broad prospects. [0003] The kesterite structure CZTSSe semiconductor material has a large absorption coefficient for visible light (>10 4 cm -1 ), adjustable bandgap (1.0-1.5eV) and high theoretical conversion efficiency (>30%) have attracted much attention, and can be used as the absorber layer...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0224H01L31/0445H01L31/18
CPCH01L31/0326H01L31/0445H01L31/022425H01L31/18Y02E10/50
Inventor 韩修训方奕锟刘为振
Owner JIANGXI UNIV OF SCI & TECH