Bulk acoustic wave device and manufacturing method thereof
A technology of bulk acoustic wave device and manufacturing method, which is applied in the field of bulk acoustic wave and can solve the problems of high cost and complicated process
Pending Publication Date: 2022-05-10
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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- Application Information
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[0003] However, the process of this preparation method is relatively complicated and the cost is relatively high
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[0055] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the application are given in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.
[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application.
[0057] It will be understood that when an element or layer is referred to as being "on," "adjacent," "con...
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The invention relates to a bulk acoustic wave device and a manufacturing method thereof, and the method comprises the steps: providing a substrate which is provided with a transmitting device region and a receiving device region; forming a first functional layer on the substrate, wherein the first functional layer at least covers the transmitting device region and the receiving device region; forming an etching stop layer on the first functional layer; forming a second functional material layer on the etching stop layer; based on the etching stop layer, the second functional material layer corresponding to the receiving device area is removed, the remaining second functional material layer forms a second functional layer, the second functional layer and the first functional layer jointly form a functional structure layer, and the piezoelectric layer or the bottom electrode layer or the top electrode layer of the bulk acoustic wave device comprises the functional structure layer. The manufacturing cost of the bulk acoustic wave device can be effectively reduced.
Description
technical field [0001] The present application relates to the field of bulk acoustic wave technology, in particular to a bulk acoustic wave device and a manufacturing method thereof. Background technique [0002] In bulk acoustic wave devices, the frequencies of the transmitting device and the receiving device are different. At the same time, the frequency is related to the thickness of each film layer of the device, and different frequencies require different film thicknesses. Therefore, in the existing BAW devices, the transmitting device and the receiving device are usually prepared separately on different wafers, and then the two are prepared by packaging. [0003] However, the process of this preparation method is relatively complicated and the cost is relatively high. Contents of the invention [0004] Based on this, embodiments of the present application provide a bulk acoustic wave device capable of reducing costs and a manufacturing method thereof. [0005] A m...
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Patent Timeline
Login to View More IPC IPC(8): H03H3/02H03H3/04H03H9/02H03H9/13H03H9/17
CPCH03H3/02H03H3/04H03H9/02157H03H9/02102H03H9/131H03H9/171H03H2003/028H03H2003/0407H03H2003/0442H03H2003/0435H03H2003/0428
Inventor 项少华王冲陈国基刘国安
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP