Integrated circuit component and manufacturing method thereof
A technology for integrated circuits and manufacturing methods, applied in circuits, electrical components, electrical solid-state devices, etc., can solve the problems of small wafer edge thickness, difficulty in focusing, and reduced bonding strength, and achieve the effect of improving yield and reliability.
Pending Publication Date: 2022-05-13
YANGTZE MEMORY TECH CO LTD
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Due to the thinning process of the chemical mechanical polishing process, the thickness of the wafer edge is smaller than that of the center, which not only leads to a decrease in bonding strength at the edge, but also makes it difficult to focus due to the unevenness of the wafer surface
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0031] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of clarity, the integrated circuit assembly obtained after several steps can be depicted in one figure.
[0032] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.
[0033] If it is to describe the situation directly on another layer or an...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses an integrated circuit component and a manufacturing method thereof. The manufacturing method comprises the steps that a plurality of wafers are bonded, the plurality of wafers at least comprise a first wafer and a second wafer, and the edge part of the second wafer is trimmed to form a step; filling the step to form a supporting layer; the first surface of the second wafer is subjected to chemical mechanical polishing to obtain a flat surface, and the first surface of the second wafer is far away from the first wafer. According to the integrated circuit assembly, the edge part of the second wafer is removed through trimming, and the supporting layer is adopted to provide protection so as to avoid the serious problem that the edge thickness is smaller than the center thickness during the chemical mechanical polishing process, so that a flat surface can be obtained, accurate focusing can be realized in the photoetching process, and the yield is improved. Therefore, the yield and the reliability of the integrated circuit assembly are improved.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, and more specifically relates to an integrated circuit component and a manufacturing method thereof. Background technique [0002] As chip manufacturing technology has advanced, stacked integrated circuit assemblies have been developed. Various circuit units are formed on multiple wafers, and then the multiple wafers are bonded together and interconnected via conductive vias to form an integrated circuit assembly. The use of stacked integrated circuit components can reduce chip footprint, reduce parasitic effects, improve response speed, reduce power consumption, and support heterogeneous integration. [0003] However, the stacked wafers in the IC assembly may cause subsequent processing difficulties. For example, after a plurality of wafers are bonded to form an integrated circuit assembly, the surface of at least one wafer is thinned and photolithographically formed to form wires or pa...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/98H01L25/18H01L27/11575H01L27/11582H10B43/27H10B43/50
CPCH01L21/02021H01L21/02013H01L25/50H01L25/18H10B43/50H10B43/27
Inventor 乔龙云李漾
Owner YANGTZE MEMORY TECH CO LTD