Light emitting diode epitaxial structure based on aluminum gallium nitride material and manufacturing method thereof
A light-emitting diode, aluminum gallium nitride technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as low efficiency, and achieve the effect of improving optical power output value, reducing heating effect, and improving external quantum efficiency
Active Publication Date: 2022-05-13
XUZHOU LIYU ADVANCED TECH CO LTD
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Problems solved by technology
Despite years of intense research, UV LEDs, especially those emitting less than 300 nm, remain inefficient compared to blue or green devices
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[0027] In order to facilitate the understanding of those skilled in the art, the present invention will be further described below in conjunction with the embodiments and accompanying drawings, and the contents mentioned in the embodiments are not intended to limit the present invention. The present invention will be described in detail below in conjunction with the accompanying drawings.
[0028] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0029] A layer of aluminum gallium nitride can be grown on a substrate, a buffer layer, another layer of III-V material, or another material, and form part of a semiconductor structure for optoelectronic or electronic components or devices, such as emitters , lasers, diodes, photocells, solar cells, transistors, memory devices, microprocessors, another aspect of the invention is a semiconductor structure made by the method. The semiconductor structure includes a layer com...
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Abstract
The invention relates to a light-emitting diode epitaxial structure based on an aluminum gallium nitride material and a manufacturing method of the light-emitting diode epitaxial structure. The light-emitting diode epitaxial structure is used for carrying out light extraction structure optimization processing on an ultraviolet light-emitting diode based on a tunneling effect. The ultraviolet light emitting diode adopting the n-p-n type tunneling structure effectively avoids the absorption of the traditional p type gallium nitride on ultraviolet light in the pn structure of the ultraviolet diode, i.e., the absorption of the p type gallium nitride on the ultraviolet light in the p-n structure of the ultraviolet diode; n-type aluminum gallium nitride (the aluminum component of the n-type aluminum gallium nitride is high enough, so that the energy band bandwidth of the n-type aluminum gallium nitride is basically pervious to ultraviolet light from an active layer) and a layer of thin n-type or non-doped gallium nitride (5 nanometers and below) are adopted; the aluminum component of the p-type aluminum gallium nitride is high enough, so that the energy band bandwidth of the p-type aluminum gallium nitride is basically pervious to ultraviolet light from the active layer. According to the ultraviolet light emitting diode with the structure, ultraviolet light absorbed in a traditional ultraviolet light emitting diode can be effectively extracted from the p surface by combining a novel light extraction structure and technology.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial structure of a light emitting diode based on an aluminum gallium nitride material and a manufacturing method thereof. Background technique [0002] Visible-spectrum LEDs based on InGaN and AlInGaP material systems are well established and are currently in mass production. However, the development of UV LEDs is still hampered by many difficulties, including the basic material properties of AlGaN alloys, especially alloys with high Al content. For example, deep-UV LEDs emitting less than 300 nm have an EQE of up to 1% compared to LEDs in the visible spectral range with external quantum efficiencies (EQE, the ratio of extracted photons to injected electron-hole pairs) greater than 50% . UV LEDs emitting in the 230-350 nm range are expected to have a wide range of applications, most of which are based on the interaction between UV radiation and biological materi...
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IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/22H01L33/0075
Inventor 廖翊韬
Owner XUZHOU LIYU ADVANCED TECH CO LTD