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Gas dopant doped deep trench super junction high voltage MOSFET

A deep trench and super junction technology, applied in transistors, electrical components, semiconductor devices, etc., can solve the problems of time-consuming and high manufacturing cost of P-type epitaxial materials, and achieve the effect of less time-consuming and low cost

Pending Publication Date: 2022-05-24
ALPHA & OMEGA SEMICON INT LP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it is not feasible to use this technique to create devices with narrow columns
Additionally, the P-type epitaxial material used to form the pillars is costly and time-consuming to manufacture

Method used

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  • Gas dopant doped deep trench super junction high voltage MOSFET
  • Gas dopant doped deep trench super junction high voltage MOSFET
  • Gas dopant doped deep trench super junction high voltage MOSFET

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Embodiment Construction

[0058] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become apparent from the following description and claims. It should be noted that, the accompanying drawings are all in a very simplified form and use imprecise ratios, and are only used to facilitate and clearly assist the purpose of explaining the embodiments of the present invention.

[0059] For convenience, the use of + or - after specifying conductivity or net impurity carrier type (p or n) generally refers to the relative concentration of net impurity carriers of the specified type within the semiconductor material. In general, n + The material has a higher concentration of n-type net dopants (eg electrons) than the n-material, and the n-material has a higher concentration than the n-material － Material with higher carrier concentration. Similarly, p + The material has ...

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Abstract

The invention discloses a manufacturing method and a super junction MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). A super junction MOSFET includes a lightly doped epitaxial layer of a first conductivity type on a heavily doped substrate of the first conductivity type, with a deep trench formed in the epitaxial layer. The deep trench has an insulating layer with a thickness gradient formed on a surface of the deep trench. One or more regions of the epitaxial layer near sidewalls of the deep trench are doped with a second conductivity type, wherein the second conductivity type is opposite to the first conductivity type. And finally, forming an MOSFET device structure in the epitaxial layer.

Description

technical field [0001] The present invention relates to a metal-oxide field effect transistor (MOSFET), in particular to an improved super junction device and a preparation method thereof. Background technique [0002] Integrated circuits, such as microprocessors and memory devices, include many metal-oxide-semiconductor field-effect transistors (MOSFETs), which provide basic switching functions to implement logic gates, data storage, power switching, and more. Power MOSFETs are typically developed for applications that require power switching and power amplification. In power MOSFETs, there is a need to reduce the on-resistance (Rds-on) of the device and increase its breakdown voltage (BV). In transistors, most of the breakdown voltage (BV) is supported by the drift region, which is lightly doped to provide higher breakdown voltage BV. However, the low-doped drift region also produces high on-resistance (Rds-on). In other words, on-resistance (Rds-on) and breakdown volta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8234H01L27/088H01L29/06H01L21/223
CPCH01L21/823493H01L21/823437H01L21/823487H01L21/823418H01L27/088H01L29/0634H01L21/2236H01L21/2256H01L21/2252H01L29/66712H01L29/7811H01L29/0653H01L21/223
Inventor 李文军陈凌兵管灵鹏王健
Owner ALPHA & OMEGA SEMICON INT LP