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Nonvolatile memory chip and semiconductor package including same

A memory chip, non-volatile technology, used in semiconductor devices, read-only memory, static memory, etc., can solve problems such as loss

Pending Publication Date: 2022-05-27
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Volatile memory devices have fast read and write speeds, but on the other hand, volatile memory devices lose their stored content when powered off

Method used

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  • Nonvolatile memory chip and semiconductor package including same
  • Nonvolatile memory chip and semiconductor package including same
  • Nonvolatile memory chip and semiconductor package including same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] Hereinafter, embodiments according to the technical idea of ​​the present disclosure will be described with reference to the accompanying drawings.

[0033] In the following, reference will be made to Figure 1 to Figure 12 The electronic device 1 including the host 100, the memory controller 200, and the nonvolatile memory 300 is described.

[0034] figure 1 is a block diagram illustrating an electronic device according to some embodiments. figure 2 Yes figure 1 block diagram of the memory controller. image 3 and Figure 4 Yes figure 1 block diagram of non-volatile memory.

[0035] refer to figure 1 , in an embodiment, the electronic device 1 includes a host 100 and a memory storage device 10 . The host 100 and the memory storage device 10 are electrically connected to each other. The host 100 provides a logical block address (LBA) and a request signal (REQ) to the memory storage device 10, and the host 100 and the memory storage device 10 transmit and recei...

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PUM

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Abstract

A non-volatile memory chip includes: a cell region including a first surface, a second surface opposite the first surface, a first cell structure, and a second cell structure spaced apart from the first cell structure; a peripheral circuit region on a first surface of the cell region, the peripheral circuit region including a first peripheral circuit connected to the first cell structure, a second peripheral circuit connected to the second cell structure, and a connection circuit between the first peripheral circuit and the second peripheral circuit; a through hole between the first cell structure and the second cell structure and extending from the second surface of the cell region to a connection circuit of the peripheral circuit region; a redistribution layer covering the through-hole on the second surface of the cell region, connected to the through-hole, and extending along the second surface; and a chip pad connected to the redistribution layer.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2020-0154629 filed in the Korean Intellectual Property Office on Nov. 18, 2020, the contents of which are incorporated herein by reference in their entirety. technical field [0002] Embodiments of the present disclosure relate to non-volatile memory chips and semiconductor packages including non-volatile memory chips. Background technique [0003] Semiconductor memory devices include volatile memory devices and nonvolatile memory devices. Volatile memory devices have fast read and write speeds, but on the other hand, volatile memory devices lose their stored content when power is removed. On the other hand, non-volatile memory devices are used to store content that needs to be saved regardless of the power source, since non-volatile memory devices retain stored content even when powered off. [0004] Examples of volatile memory devices include static RAM (SRAM), dynamic RAM (DRAM), synchronous DR...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/528H01L27/115
CPCH01L23/528H10B69/00H01L2224/04042H01L2224/05569H01L2224/02372H01L2224/02375H01L2224/48227H01L2224/49175H01L2224/32145H01L2224/48145H01L2224/73215H01L2224/73265H01L2224/33181H01L2224/02379H01L2224/0235H01L2224/08145H01L2224/73251H01L2224/80895H01L24/05H01L24/02H01L2225/0651H01L2225/06506H01L2225/06527H01L2225/06562H01L25/0657H10B43/10H10B43/40H10B43/50H10B43/27H01L2224/08H01L2224/48H01L2224/32H01L2924/00H01L23/525H01L23/481H01L24/06H01L24/09H01L23/49838H10B43/35G11C16/08H01L23/5226H01L23/5283H10B41/10H10B41/27H10B41/40
Inventor 李民宰卞辰瑫孙永训崔荣暾郭判硕李明勋崔桢焕
Owner SAMSUNG ELECTRONICS CO LTD